Semiconductor optical amplifier and optical amplification apparatus
A semiconductor optical amplifier includes a semiconductor substrate, a lower cladding layer formed on the semiconductor substrate, a light absorption layer and an optical amplification layer formed on the lower cladding layer, and an upper cladding layer formed on the light absorption layer and the optical amplification layer. The band gap of a semiconductor material that forms the light absorption layer is wider than the band gap of a semiconductor material that forms the optical amplification layer. The difference between the band gap of the semiconductor material that forms the light absorption layer and the band gap of the semiconductor material that forms the optical amplification layer is 0.12 eV or more.
1. A semiconductor optical amplifier comprising:
a semiconductor substrate;
a lower cladding layer formed on the semiconductor substrate;
a light absorption layer and an optical amplification layer formed on the lower cladding layer;
an upper cladding layer formed on the light absorption layer and the optical amplification layer;
a common electrode formed on the bottom surface of the semiconductor substrate;
an optical amplification layer electrode formed in an optical amplification region where the optical amplification layer is formed, through the upper cladding layer; and
a light absorption layer electrode formed in a light absorption region where the light absorption layer is formed, through the upper cladding layer; wherein
a band gap of a semiconductor material that forms the light absorption layer is wider than a band gap of a semiconductor material that forms the optical amplification layer,
the difference between the band gap of the semiconductor material that forms the light absorption layer and the band gap of the semiconductor material that forms the optical amplification layer is 0.12 eV or more, and
the light absorption layer and the optical amplification layer are connected in the light-propagating direction to form an optical waveguide.
2. A semiconductor optical amplifier comprising:
a semiconductor substrate;
a lower cladding layer formed on the semiconductor substrate;
a light absorption layer and an optical amplification layer formed on the lower cladding layer; and
an upper cladding layer formed on the light absorption layer and the optical amplification layer, wherein
a band gap of a semiconductor material that forms the light absorption layer is wider than a band gap of a semiconductor material that forms the optical amplification layer, and
the difference between the band gap of the semiconductor material that forms the light absorption layer and the band gap of the semiconductor material that forms the optical amplification layer is 0.12 eV or more; wherein
the light absorption layer and the optical amplification layer are stacked in the vertical direction to the light-propagating direction, and a channel layer is placed between the light absorption layer and the light amplification layer.
3. The semiconductor optical amplifier according to claim 1 , wherein
light enters an end face of the light absorption layer and is output from an end face of the optical amplification layer.
4. The semiconductor optical amplifier according to claim 2 , further comprising:
a light absorption layer electrode formed on the bottom surface of the semiconductor substrate;
an optical amplification layer electrode formed on the upper cladding layer, and
a common electrode connected to the channel layer.
5. The semiconductor optical amplifier according to claim 2 , wherein
the thickness of the channel layer is 300 nm or less.
6. The semiconductor optical amplifier according to claim 2 , wherein
the channel layer is made of a material containing InP.
7. The semiconductor optical amplifier according to claim 2 , wherein
among end faces of the light absorption layer and end faces of the light amplification layer, an end face on which light is incident and an end face from which light is output are respectively provided with anti-reflection films.
8. A semiconductor optical amplifier comprising:
a semiconductor substrate;
a lower cladding layer formed on the semiconductor substrate;
a light absorption layer and an optical amplification layer formed on the lower cladding layer; and
an upper cladding layer formed on the light absorption layer and the optical amplification layer, wherein
a band gap of a semiconductor material that forms the light absorption layer is wider than a band gap of a semiconductor material that forms the optical amplification layer, and
the difference between the band gap of the semiconductor material that forms the light absorption layer and the band gap of the semiconductor material that forms the optical amplification layer is 0.12 eV or more; wherein
an optical gain is changed by controlling the amount of current flowing through the light absorption layer while a constant current is flowing through the optical amplification layer.
9. The semiconductor optical amplifier according to claim 8 , wherein
the light amplification layer and the optical amplification layer are made of materials containing the same elements with different composition ratios.
10. The semiconductor optical amplifier according to claim 8 , wherein
the light absorption layer and the optical amplification layer are made of materials containing InGaAsP or AlGaInAs with different composition ratios.
11. The semiconductor optical amplifier according to claim 8 , wherein
the optical amplification layer has a multiple quantum well structure.
12. The semiconductor amplifier according to claim 8 , wherein
the light absorption layer is provided with an amount of tensile strain of 0.76% or less.
13. The semiconductor optical amplifier according to claim 8 , wherein
the semiconductor substrate is made of a material containing InP.
14. The semiconductor optical amplifier according to claim 8 , wherein
the lower cladding layer and the upper cladding layer are made of materials containing InP.
15. An optical amplifier, comprising:
a semiconductor optical amplifier;
a first optical detector to measure the amount of light incident on the semiconductor optical amplifier;
a second optical detector to measure the amount of light output from the semiconductor optical amplifier;
an optical gain control circuit to calculate an amount of current to be applied to a light absorption layer based on the amount of light detected by the first optical detector and the second optical detector; and
a light absorption layer driving circuit to apply a current to the light absorption layer based on the amount of current to be applied to the light absorption layer, wherein
the semiconductor optical amplifier includes:
a semiconductor substrate;
a lower cladding layer formed on the semiconductor substrate;
a light absorption layer and an optical amplification layer formed on the lower cladding layer; and
an upper cladding layer formed on the light absorption layer and the optical amplification layer, wherein
a band gap of a semiconductor material that forms the light absorption layer is larger than a band gap of a semiconductor material that forms the optical amplification layer, and
the difference between the band gap of the semiconductor material that forms the light absorption layer and the band gap of the semiconductor material that forms the optical amplification layer is 0.12 eV or more.
16. The optical amplifier according to claim 15 , wherein
the optical gain control circuit further calculates the amount of current to be applied to the optical amplification layer based on the amount of light detected by the first optical detector and the amount of light detected by the second optical detector, and
the optical amplifier further includes an optical amplification layer drive circuit that applies a current to the optical amplification layer based on the amount of current to be applied to the optical amplification layer.