Linear FET feedback amplifier

1. A circuit comprising:

a Darlington transistor pair having an input transistor and an output transistor configured to generate an output signal at an output node in response to an input signal received through an input node;

a frequency bias feedback network communicatively coupled between the output transistor and the input node for providing biasing to the Darlington transistor pair as well as for adjusting a phase and amplitude of an amplified version of the input signal that passes through the input transistor and into the frequency bias feedback network, wherein the frequency bias network comprises:

a bias transistor coupled between a feedback coupling network and a fixed voltage node; and

an electronically controllable phase shifter and amplitude attenuator that is responsive to a control signal and tunable within a ramie that increases a third order intercept point (IP3) to improve an upper frequency band linearity; and

the feedback coupling network coupled between the output node and the input node for feeding back to the input node a portion of the amplified version of the input signal that passes through the input transistor.

2. The circuit of claim 1 , wherein the portion of the amplified version of the input signal that passes through the input transistor is phase and amplitude adjusted.

3. The circuit of claim 1 , wherein the output signal is fed back to the input node via the feedback coupling network.

4. The circuit of claim 1 , wherein the electronically controllable phase shifter and amplitude attenuator is a resistor capacitor (RC) network made up of a variable resistor and a capacitor having a fixed capacitance value, wherein the variable resistor changes resistance in response to the control signal.

5. The circuit of claim 4 , wherein the variable resistor is a field effect transistor (FET) coupled in series with a gate of the bias transistor.

6. The circuit of claim 1 , wherein the electronically controllable phase shifter and amplitude attenuator is an RC network made up of a resistor having a fixed resistance value and a variable capacitor that changes capacitance in response to the control signal.

7. The circuit of claim 6 , wherein the variable capacitor is tunable within a range that increases IP3 to improve an upper frequency band linearity.

8. The circuit of claim 6 , wherein the variable capacitor is a varactor diode.

9. The circuit of claim 1 , wherein the electronically controllable phase shifter and amplitude attenuator is an RC network made up of a variable resistor that changes resistance in response to the control signal and a variable capacitor that changes capacitance in response to a second control signal.

10. The circuit of claim 9 , wherein the variable resistor is tunable to a resistance value and the variable capacitor is tunable to a capacitance value that suppress intermodulation (IM) distortion at the output node of the transistor.

11. The circuit of claim 1 , wherein the feedback coupling network includes a pair of split feedback resistors coupled at a tap point that is communicatively coupled to the bias transistor.

12. A mobile terminal comprising:

an antenna;

a duplexer/switch coupled to the antenna;

amplifier circuitry selectively coupled to the antenna through the duplexer/switch, the amplifier circuitry comprising:

a Darlington transistor pair having an input transistor and an output transistor configured to generate an output signal at an output node in response to an input signal received through an input node;

a frequency bias feedback network communicatively coupled between the output transistor and the input node for providing biasing to the Darlington transistor pair as well as for adjusting a phase and amplitude of an amplified version of the input signal that passes through the input transistor and into the frequency bias feedback network:

a feedback coupling network coupled between the output node and the input node for feeding back to the input node a portion of the amplified version of the input signal that passes through the input transistor;

a bias transistor coupled between the feedback coupling network and a fixed voltage node; and

an electronically controllable phase shifter and amplitude attenuator that is responsive to a control signal and tunable within a range that increases a third order intercept point (IP3) to improve an upper frequency band linearity; and

a control system for controlling the electronically controllable phase shifter and amplitude attenuator.

13. The circuit of claim 12 , wherein the portion of the amplified version of the input signal that passes through the input transistor is phase and amplitude adjusted.

14. The circuit of claim 12 , wherein the output signal is fed back to the input node via the feedback coupling network.

15. The mobile terminal of claim 12 , further including a radio frequency (RF) transmitter section that includes the amplifier circuitry and wherein the amplifier circuitry is power amplifier circuitry.

16. The mobile terminal of claim 12 , further including a receiver front end that includes the amplifier circuitry and wherein the amplifier circuitry comprises a low noise amplifier (LNA).

17. The mobile terminal of claim 12 , further including a receiver front end that includes the amplifier circuitry and wherein the amplifier circuitry comprises an intermediate frequency (IF) amplifier.

18. The mobile terminal of claim 12 , wherein the electronically controllable phase shifter and amplitude attenuator is a resistor capacitor (RC) network made up of a variable resistor and a capacitor having a fixed capacitance value, wherein the variable resistor changes resistance in response to the control signal.

19. The mobile terminal of claim 18 , wherein the variable resistor is a FET coupled in series with a gate of the bias transistor.

20. The mobile terminal of claim 12 , wherein the electronically controllable phase shifter arid amplitude attenuator is an RC network made up of a resistor having a fixed resistance value and a variable capacitor that changes capacitance in response to the control signal.

21. The mobile terminal of claim 20 , wherein the variable capacitor is a varactor diode.

22. The mobile terminal of claim 12 , wherein the electronically controllable phase shifter and amplitude attenuator is an RC network made up of a variable resistor that changes resistance in response to the control signal and a variable capacitor that changes capacitance in response to a second control signal,

23. The mobile terminal of claim 22 , wherein the variable resistor is tunable to a resistance value and the variable capacitor is tunable to a capacitance value that suppresses intermodulation (IM) distortion at the output node of the output transistor.

24. The mobile terminal of claim 12 , wherein the feedback coupling network includes a pair of split feedback resistors coupled at a tap point that is communicatively coupled to the bias transistor.

25. A circuit comprising:

a Darlington transistor pair having an input transistor and an output transistor configured to generate an output signal at an output node in response to an input signal received through an input node;

a frequency bias feedback network communicatively coupled between the output transistor and the input node for providing biasing to the Darlington transistor pair as well as for adjusting a phase and amplitude of an amplified version of the input signal that passes through the input transistor and into the frequency bias feedback network, wherein the frequency bias network comprises:

a bias transistor coupled between a feedback coupling network and a fixed voltage node; and

an electronically controllable phase shifter and amplitude attenuator that is responsive to a control signal and tunable within a range that suppresses intermodulation (IM) distortion at the output node of the transistor; and

the feedback coupling network coupled between the output node and the input node for feeding back to the input node a portion of the amplified version of the input signal that passes through the input transistor.