Hybrid silicon electro-optic modulator
An electro-optic modulator comprising a first region of silicon material and a second region of non-silicon material. The second region may at least partially overlap the first region to create a lateral overlap region. An optical waveguide of the modulator may be included in the lateral overlap region and comprise of both the silicon and the non-silicon material. The refractive index of at least one of the silicon material and the non-silicon material within the optical waveguide may change based on an electrical difference applied between electrical contacts of the modulator.
1. A modulator comprising:
a first region of silicon semiconductor material;
a second region of non-silicon semiconductor material, the second region above and to at least partially overlap the first region to create a lateral overlap region;
a first and a second electrical contacts coupled to the first region and the second region, respectively; and
an optical waveguide of the modulator to receive light, included in the lateral overlap region and comprising the silicon semiconductor material and the non-silicon semiconductor material, the optical waveguide to modulate the received light based on changes to the absorption coefficient of at least one of the semiconductor materials of the optical waveguide via an electric field generated by an electrical difference applied between the first and second electrical contacts.
2. The modulator of claim 1 , wherein the non-silicon semiconductor material comprises a III-V semiconductor material.
3. The modulator of claim 1 , further comprising a dielectric layer disposed between the overlap of the first and second regions to prevent electric current flow between the first and second electrical contacts.
4. The modulator of claim 1 , wherein the first and second regions are doped with complementary dopants, and the electrical difference applied between the first and second electrical contacts comprises a voltage applied to the first and second electrical contacts.
5. The modulator of claim 3 , wherein the first region and a first portion of the second region are doped with a same dopant, and the electrical difference applied between the first and second electrical contacts comprises an electrical field further applied to a second, non-doped portion of the second region.
6. The modulator of claim 5 , wherein the same dopant comprises an n-type dopant.
7. The modulator of claim 1 , wherein the first region and the second region overlap symmetrically with respect to the optical waveguide.
8. The modulator of claim 1 , wherein the first region and the second region overlap asymmetrically with respect to the optical waveguide.
9. The modulator of claim 1 further comprising a contact layer formed between the second region and the second electrical contact to enhance the creation of ohmic contacts below the second electrical contact in a portion of the second region.
10. The modulator of claim 9 , wherein the contact layer comprises p-type Indium Gallium Arsenide (p-InGaAs).
11. The modulator of claim 10 , wherein the second region of non-silicon semiconductor material further comprises
a cladding layer below the contact layer, the cladding layer to confine an optical mode of the optical waveguide;
an active layer below the cladding layer, the active layer to include an active region; and
an n-type layer between the active layer and the first region of silicon semiconductor material.
12. The modulator of claim 11 , wherein the cladding layer comprises N-doped Indium Phosphide (N InP).
13. The modulator of claim 11 , wherein the active layer comprises at least one of intrinsic Iridium Gallium Arsenide Phosphide (i-InGaAsP) and Indium Aluminum Gallium Arsenide (InAlGaAs).
14. The modulator of claim 11 , wherein the active layer comprises a multiple quantum well (MQW) layer.
15. A method comprising:
receiving light from a light source at a modulator;
applying an electrical difference between a first and a second electrical contact of the modulator to generate an electric field for modulating the received light in an optical waveguide of the modulator based on changes to the absorption coefficient of at least one of the semiconductor materials of the optical waveguide, the modulator to further include
a first region of silicon semiconductor material, and a second region of non-silicon semiconductor material, the second region above and to at least partially overlap the first region to create a lateral overlap region.
16. The method of claim 15 , wherein the non-silicon semiconductor material comprises a III-V semiconductor material.
17. The method of claim 15 , wherein the modulator further comprises a dielectric layer disposed between the overlap of the first and second regions to prevent electric current flow between the first and second electrical contacts.
18. The method of claim 15 , wherein the first and second regions of the modulator are doped with complementary dopants, and applying the electrical difference between the first and second electrical contacts comprises
applying an electrical voltage to the first and second electrical contacts.
19. The method of claim 15 , wherein the first region and a first portion of the second region of the modulator are doped with an n-type dopant, and applying the electrical difference between the first and second electrical contacts comprises
applying an electrical field to the first and second electrical contacts.
20. The modulator of claim 13 , wherein the changes to the absorption coefficient of at least one of the semiconductor materials of the optical waveguide is due to a Franz-Keldysh effect.
21. The modulator of claim 14 , wherein the changes to the absorption coefficient of at least one of the semiconductor materials of the optical waveguide is due to a quantum confined stark effect (QCSE).