Semiconductor light-emitting device and method for manufacturing the same
View Patent ↗A semiconductor light-emitting device includes an n-type cladding layer formed on a substrate, an active layer formed on the n-type cladding layer and including a well layer and a barrier layer, and a p-type cladding layer formed on the active layer. The well layer is made of an indium-containing nitride semiconductor, and has a hydrogen concentration greater than that of the n-type cladding layer and less than that of the p-type cladding layer.
1. A semiconductor light-emitting device, comprising:
an n-type cladding layer formed on a substrate;
an active layer formed on the n-type cladding layer and including a well layer and a barrier layer; and
a p-type cladding layer formed on the active layer, wherein
the well layer is made of an indium-containing nitride semiconductor, and has a hydrogen concentration greater than that of the n-type cladding layer and less than that of the p-type cladding layer.
2. The semiconductor light-emitting device of claim 1 , wherein
the hydrogen concentration of the well layer is greater than twice and less than approximately 10 times the hydrogen concentration of the n-type cladding layer and is greater than approximately 0.07 time and less than approximately 0.35 time the hydrogen concentration of the p-type cladding layer.
3. The semiconductor light-emitting device of claim 1 , wherein
the hydrogen concentration of the well layer is greater than approximately 7×10 17 cm −3 and less than approximately 3×10 18 cm −3 .
4. The semiconductor light-emitting device of claim 1 , wherein
the well layer and the barrier layer have an equal hydrogen concentration.
5. The semiconductor light-emitting device of claim 1 , wherein
the well layer is made of a compound whose general formula is expressed as In x Ga 1-x N (where 0<x<1).
6. The semiconductor light-emitting device of claim 5 , wherein
an indium content ratio of the well layer is approximately 0.1 or more.
7. The semiconductor light-emitting device of claim 1 , wherein
an indium segregation density of the active layer is approximately 1×10 6 cm −2 or less.
8. The semiconductor light-emitting device of claim 1 , wherein
a photoluminescence half width of the active layer is approximately 120 meV or less.
9. A method for manufacturing a semiconductor light-emitting device, comprising the steps of:
(a) growing an n-type cladding layer on a substrate;
(b) after the step (a), growing an active layer using a hydrogen-containing carrier gas; and
(c) after the step (b), growing a p-type cladding layer, wherein
the active layer includes a well layer and a barrier layer, and
the well layer is made of an indium-containing nitride semiconductor, and has a hydrogen concentration greater than that of the n-type cladding layer and less than that of the p-type cladding layer.
10. The method for manufacturing a semiconductor light-emitting device of claim 9 , wherein
the step (b) is performed so that the hydrogen concentration of the well layer is greater than twice and less than approximately 10 times the hydrogen concentration of the n-type cladding layer and is greater than approximately 0.07 time and less than approximately 0.35 time the hydrogen concentration of the p-type cladding layer.
11. The method for manufacturing a semiconductor light-emitting device of claim 9 , wherein
the step (b) is performed so that the hydrogen concentration of the well layer is greater than approximately 7×10 17 cm −3 and less than approximately 3×10 18 cm −3 .
12. The method for manufacturing a semiconductor light-emitting device of claim 9 , wherein
the step (b) is performed so that the hydrogen concentration of the well layer and the hydrogen concentration of the barrier layer are equal to each other.
13. The method for manufacturing a semiconductor light-emitting device of claim 9 , wherein
the well layer is made of a compound whose general formula is expressed as In x Ga 1-x N (where 0<x<1).
14. The method for manufacturing a semiconductor light-emitting device of claim 13 , wherein
an indium content ratio of the well layer is approximately 0.1 or more.
15. The method for manufacturing a semiconductor light-emitting device of claim 9 , wherein
an indium segregation density of the active layer is approximately 1×10 6 cm −2 or less.
16. The method for manufacturing a semiconductor light-emitting device of claim 9 , wherein
a photoluminescence half width of the active layer is approximately 120 meV or less.