METHOD FOR MANUFACTURING A FILM STRUCTURE

1 . A method for manufacturing a film structure, comprising:

forming a layer of precursor material for the film structure on a substrate;

preheating the precursor material; and

irradiating the precursor material with microwave radiation.

2 . The method of claim 1 , wherein:

the preheating of the precursor material is performed at a temperature of 100 to 200° C.

3 . The method of claim 2 , wherein:

the preheating of the precursor material is performed using an infrared heater or by irradiating the precursor material with light.

4 . The method of claim 3 , wherein:

the irradiating the precursor material with microwave radiation is performed at a temperature of 350° C. or less.

5 . The method of claim 4 , wherein:

the microwave radiation has a frequency range of 300 MHz to 300 GHz.

6 . The method of claim 1 , wherein:

the film structure includes a semiconductor, and forming a layer of precursor material for the film structure on a substrate includes using a solution process.

7 . The method of claim 1 , wherein:

the film structure includes an organic film.

8 . The method of claim 7 , wherein:

the organic film is at least one of a color filter material, a light blocking film material, an alignment layer material, a photoresist film material, a column spacer material, an overcoat layer material and a spacer.

9 . The method of claim 7 , wherein:

the organic film includes an organic material including a dipole.

10 . The method of claim 7 , wherein:

the organic film includes is at least one of polystyrene, methyl methacrylate, methacrylic acid, hydroxyethyl methacrylate, ethyl 3-ethoxypropionate, propyleneglycol-monoethylether, cyclohexanone, propyleneglycol-monoethylether acetate (PGMEA), and polyimide.

11 . A method for manufacturing a liquid crystal display, comprising:

forming a field generating electrode on at least one of a first substrate and a second substrate that faces the first substrate;

forming an alignment layer on the field generating electrode;

forming a liquid crystal layer including liquid crystal molecules and an alignment supplement agent between the first substrate and the second substrate; and

forming an alignment polymer by irradiating the alignment layer and the liquid crystal layer with microwave radiation.

12 . The method of claim 11 , further comprising:

before the forming of the alignment polymer, preheating the alignment layer and the liquid crystal layer.

13 . The method of claim 12 , wherein:

the preheating of the alignment layer and the liquid crystal layer is performed at a temperature in the range of 100 to 200° C.

14 . The method of claim 13 , wherein:

the irradiating the alignment layer and the liquid crystal layer with microwave radiation is performed at a temperature of 350° C. or less.

15 . The method of claim 14 , wherein:

the microwave radiation has a frequency range of 300 MHz to 300 GHz.

16 . A method for manufacturing a thin film transistor, comprising:

forming a gate line on a substrate;

forming a gate insulating layer on the gate line;

forming a layer of semiconductor precursor material on the gate insulating layer;

preheating the semiconductor precursor material;

forming a semiconductor layer by irradiating the preheated semiconductor precursor material with microwave radiation; and

forming a source electrode and a drain electrode that face each other on the semiconductor layer.

17 . The method of claim 16 , wherein:

the preheating of the semiconductor precursor material is performed using an infrared heater or by irradiating the precursor material with light.

18 . The method of claim 17 , wherein:

irradiating of the semiconductor precursor material with microwave radiation is performed at a temperature of 350° C. or less.

19 . The method of claim 18 , wherein:

the microwave radiation has a frequency range of 300 MHz to 300 GHz.

20 . The method of claim 16 , wherein:

the semiconductor precursor material layer is formed of an oxide semiconductor using a solution process.