Semiconductor device providing a first electrical conductor and a second electrical conductor in one through hole and method for manufacturing the same
View Patent ↗A semiconductor device 100 is provided with a multiplex through plug 111 that fills an opening extending through the silicon substrate 101 . The multiplex through plugs 111 comprises a column-shaped and solid first through electrode 103 , a first insulating film 105 that covers the cylindrical face of the first through electrode 103 , a second through electrode 107 that covers the cylindrical face of the first insulating film 105 and a second insulating film 109 that covers the cylindrical face of the second through electrode 107 , and these have a common central axis. The upper cross sections of the first insulating film 105 , the second through electrode 107 and the second insulating film 109 are annular-shaped.
1. A semiconductor device, comprising:
a semiconductor substrate;
a solid plug-shaped insulating plug extending through said semiconductor substrate;
a pipe-shaped first electrical conductor, covering a circumference of said insulating plug, and extending through said semiconductor substrate;
a pipe-shaped second electrical conductor, being provided in a circumference of said first electrical conductor, and extending through said semiconductor substrate; and
an insulating film, being provided between said first electrical conductor and said second electrical conductor, and providing an electrical insulation between said first electrical conductor and said second electrical conductor.
2. The semiconductor device according to claim 1 , wherein said first electrical conductor is composed of a material, which is different from a material for composing said second electrical conductor.
3. The semiconductor device according to claim 1 , wherein one or more pipe-shaped electrical conductors containing at least said second electrical conductor are formed through the insulating film in the circumference of said first electrical conductor by taking a central axis of a through hole extending through said semiconductor substrate as an axis of said one or more pipe-shaped electrical conductors, and a material of the outermost pipe-shaped electrical conductor among said one or more pipe-shaped electrical conductors is a material having the highest melting point among a material for said first electrical conductor and materials for said one or more pipe-shaped electrical conductors.
4. The semiconductor device according to claim 1 , further comprising an extra semiconductor substrate provided with a conductive component, which is coupled to said first electrical conductor or said second electrical conductor provided in said semiconductor substrate.
5. The semiconductor device according to claim 1 , further comprising a through electrode comprising said first electrical conductor and said second electrical conductor, wherein an electric potential of said second electrical conductor is fixed at a supply potential or a ground potential, and said second electrical conductor is electrically coupled to a ground plane covering said semiconductor device.
6. The semiconductor device according to claim 1 , further comprising an outer insulating film, which is provided between said second electrical conductor and said semiconductor substrate and separates between said second electrical conductor and said semiconductor substrate.
7. The semiconductor device according to claim 1 , wherein a geometry of said outer insulating film is a cylindrical component extending through said semiconductor substrate.
8. The semiconductor device according to claim 1 , wherein said first electrical conductor and said second electrical conductor are electrically coupled to different interconnects respectively.