Display device and method for manufacturing the same
View Patent ↗The present invention relates to a display device and a method of manufacturing the display device. The display device includes an insulation substrate, a gate conductor including a gate line and a gate electrode, an organic layer on the insulation substrate and the gate line, and a data conductor including a data line, a drain electrode, and a source electrode. The data line crosses the gate line. The gate electrode, the drain electrode, and the source electrode form a transistor, and a thickness of the gate electrode may be larger than a thickness of the gate line.
1. A display device, comprising:
a substrate;
a gate conductor comprising a gate line and a gate electrode, the gate conductor being disposed on the substrate;
an organic layer disposed on the substrate and the gate line, wherein the organic layer exposes at least a portion of the gate electrode; and
a data conductor comprising a data line, a drain electrode, and a source electrode,
wherein the data line crosses the gate line with the organic layer being disposed between the data line and the gate line, and
wherein a thickness of the gate electrode is larger than a thickness of the gate line.
2. The display device of claim 1 , further comprising:
a gate insulating layer disposed on the organic layer and on the gate electrode.
3. The display device of claim 2 , wherein the organic layer and the gate electrode have a level surface.
4. The display device of claim 3 , wherein the gate insulating layer is disposed on a flat surface of the organic layer and a flat surface of the gate electrode.
5. The display device of claim 4 , further comprising:
a semiconductor disposed between the gate insulating layer and the data conductor.
6. The display device of claim 1 , wherein the thickness of the gate line is in a range of 3,000 Å to 20,000 Å.
7. The display device of claim 6 , wherein the thickness of the gate insulating layer is 500 Å.
8. The display device of claim 1 , wherein the gate line and the gate electrode each comprise a first conductive layer, and the gate electrode, but not the gate line, comprises a second conductive layer.
9. The display device of claim 8 , wherein the first conductive layer comprises a titanium-based metal and the second conductive layer comprises a copper-based metal.
10. The display device of claim 1 , wherein each of a first conductive layer and an etching stop conductive layer comprise the gate line, and wherein each of the first conductive layer, the etching stop conductive layer, and a second conductive layer comprise the gate electrode.
11. The display device of claim 10 , wherein the etching stop conductive layer comprises a titanium-based metal and the first conductive layer and the second conductive layer comprise a copper-based metal.
12. A display device, comprising:
a substrate;
a gate conductor comprising a gate line and a gate electrode, the gate conductor being disposed on the substrate;
an organic layer disposed on the substrate and the gate line, wherein the organic layer exposes at least a portion of the gate electrode;
an insulating layer; and
a data conductor comprising a data line, a drain electrode, and a source electrode,
wherein the data line crosses the gate line with the organic layer and the insulating layer being disposed between the data line and the gate line, and
wherein a thickness of the gate electrode is larger than a thickness of the gate line.
13. The display device of claim 12 , wherein the insulating layer is disposed between the organic layer and the data line.
14. The display device of claim 12 , wherein the organic layer is disposed directly on the substrate and directly on the gate line.
15. The display device of claim 14 , wherein the organic layer is further disposed directly on a side surface of the gate electrode.
16. The display device of claim 15 , wherein the insulating layer is disposed directly on an uppermost surface of the gate electrode.
17. The display device of claim 12 , further comprising:
a semiconductor disposed on the gate electrode and under the source electrode and the drain electrode.
18. The display device of claim 17 , wherein the insulating layer is disposed between the gate electrode and the semiconductor.
19. The display device of claim 18 , wherein a lower surface of the insulating layer is disposed directly on the gate electrode, and a lower surface of the semiconductor is disposed directly on an upper surface of the insulating layer.
20. The display device of claim 12 , wherein an upper surface of the gate electrode and an upper surface of the organic layer together form a substantially planar surface on the substrate.
21. The display device of claim 20 , wherein the insulating layer is disposed directly on the upper surface of the gate electrode and directly on the upper surface of the organic layer.