Dye Sensitized Photovoltaic Cell
Solid state dye sensitized photovoltaic cells, as well as related components, systems, and methods, are disclosed.
1 . An article, comprising:
first and second electrodes; and
a photovoltaically active layer between the first and second electrodes, the photovoltaically active layer comprising titanium oxide nanoparticles;
wherein the nanoparticles have an average particle diameter of at least about 20 nm and the article is configured as a solid state photovoltaic cell.
2 . The article of claim 1 , wherein the nanoparticles have an average particle diameter of at most about 100 nm.
3 . The article of claim 1 , wherein the nanoparticles have an average particle diameter between about 25 nm and about 60 nm.
4 . The article of claim 1 , wherein the photovoltaically active layer has a thickness of at least about 500 nm.
5 . The article of claim 1 , wherein the photovoltaically active layer has a thickness of at most about 10 microns.
6 . The article of claim 1 , wherein the photovoltaically active layer further comprises a dye.
7 . The article of claim 1 , wherein the dye has a molar extinction coefficient of at least about 8,000.
8 . The article of claim 1 , wherein the photovoltaically active layer further comprises a proton scavenger.
9 . The article of claim 8 , wherein the proton scavenger comprises a guanidino-alkanoic acid.
10 . The article of claim 1 , further comprising a hole carrier layer between the photovoltaically active layer and the second electrode.
11 . The article of claim 10 , wherein the hole carrier layer comprises a material selected from the group consisting of spiro-MeO-TAD, triaryl amines, polythiophenes, polyanilines, polycarbazoles, polyvinylcarbazoles, polyphenylenes, polyphenylvinylenes, polysilanes, polythienylenevinylenes, polyisothianaphthanenes, and copolymers or mixtures thereof.
12 . The article of claim 11 , wherein the hole carrier layer comprises poly(3-hexylthiophene) or poly(3,4-ethylenedioxythiophene).
13 . The article of claim 1 , further comprising a hole blocking layer between the photovoltaically active layer and the first electrode.
14 . The article of claim 13 , wherein the hole blocking layer comprises LiF, metal oxides, or amines.
15 . The article of claim 14 , wherein the hole blocking layer comprises a non-porous metal oxide layer.
16 . An article, comprising:
first and second electrodes; and
a photovoltaically active layer between the first and second electrodes, the photovoltaically active layer comprising a metal oxide, a dye, and a proton scavenger;
wherein the article is configured as a photovoltaic cell.
17 . The article of claim 16 , wherein the metal oxide is in the form of nanoparticles.
18 . The article of claim 17 , wherein the nanoparticles have an average particle diameter of at least about 20 nm.
19 . The article of claim 17 , wherein the nanoparticles have an average particle diameter of at most about 100 nm.
20 . The article of claim 17 , wherein the nanoparticles have an average particle diameter between about 25 nm and about 60 nm.
21 . The article of claim 16 , wherein the metal oxide is selected from the group consisting of titanium oxides, tin oxides, niobium oxides, tungsten oxides, zinc oxides, zirconium oxides, lanthanum oxides, tantalum oxides, terbium oxides, and combinations thereof.
22 . The article of claim 16 , wherein the metal oxide comprises a titanium oxide.
23 . The article of claim 16 , wherein the dye has a molar extinction coefficient of at least about 8,000.
24 . The article of claim 16 , wherein the proton scavenger comprises a guanidino-alkanoic acid.
25 . The article of claim 24 , wherein the guanidino-alkanoic acid comprises a guanidino-butyric acid.
26 . The article of claim 16 , wherein the photovoltaically active layer has a thickness of at least about 500 nm.
27 . The article of claim 16 , wherein the photovoltaically active layer has a thickness of at most about 10 microns.
28 . The article of claim 16 , further comprising a hole carrier layer between the photovoltaically active layer and the second electrode.
29 . The article of claim 28 , wherein the hole carrier layer comprises a material selected from the group consisting of spiro-MeO-TAD, triaryl amines, polythiophenes, polyanilines, polycarbazoles, polyvinylcarbazoles, polyphenylenes, polyphenylvinylenes, polysilanes, polythienylenevinylenes, polyisothianaphthanenes, and copolymers or mixtures thereof.
30 . The article of claim 29 , wherein the hole carrier layer comprises poly(3-hexylthiophene) or poly(3,4-ethylenedioxythiophene).
31 . The article of claim 16 , further comprising a hole blocking layer between the photovoltaically active layer and the first electrode.
32 . The article of claim 31 , wherein the hole blocking layer comprises LiF, metal oxides, or amines.
33 . The article of claim 31 , wherein the hole blocking layer comprises a non-porous metal oxide layer.
34 . The article of claim 16 , wherein the article is configured as a solid state photovoltaic cell.