Apparatus and method for introducing a controllable delay to an input signal
View Patent ↗An apparatus including a first electrode portion configured to inject charge carriers; a second electrode portion configured to collect charge carriers and provide an output signal; a third electrode portion configured to collect charge carriers and provide an output signal; a monolithic semiconductor, providing a first channel for the transport of injected charge carriers between the first electrode portion and the second electrode portion and providing a second channel for the transport of injected charge carriers between the first electrode portion and the third electrode portion, wherein the first channel is configured such that a charge carrier injected at the first electrode portion will reach the second electrode portion via the first channel after a first transport time and the second channel is configured such that a charge carrier injected at the first electrode portion will reach the third electrode portion via the second channel after a second transport time greater than the first transport time; and at least one gate electrode coupled to the monolithic semiconductor configured to enable switching a route for charge carrier transport between at least the first channel and the second channel.
1. An apparatus comprising:
a first electrode portion configured to inject charge carriers;
a second electrode portion configured to collect charge carriers and provide an output signal;
a third electrode portion configured to collect charge carriers and provide an output signal;
a monolithic semiconductor, providing a first channel for the transport of injected charge carriers between the first electrode portion and the second electrode portion and providing a second channel for the transport of injected charge carriers between the first electrode portion and the third electrode portion, wherein the first channel is configured such that a charge carrier injected at the first electrode portion will reach the second electrode portion via the first channel after a first transport time and the second channel is configured such that a charge carrier injected at the first electrode portion will reach the third electrode portion via the second channel after a second transport time greater than the first transport time; and
at least one gate electrode coupled to the monolithic semiconductor configured to enable switching a route for charge carrier transport between at least the first channel and the second channel.
2. An apparatus as claimed in claim 1 , wherein the first channel has a first length between the first electrode portion and the second electrode portion and the second channel has a second length between the first electrode portion and the third electrode portion that is greater than the first length.
3. An apparatus as claimed in claim 1 , wherein the first channel and the second channel have substantially the same charge carrier density doping.
4. An apparatus as claimed in claim 1 , wherein the first channel and the second channel have substantially the same electron mobility.
5. An apparatus as claimed in claim 1 , wherein the monolithic semiconductor comprises graphene.
6. An apparatus as claimed in claim 1 , wherein the monolithic semiconductor comprises a graphene monolayer.
7. An apparatus as claimed in claim 6 , wherein the graphene monolayer is supported by a dielectric substrate.
8. An apparatus as claimed in claim 1 , wherein the monolithic semiconductor is configured for ballistic transport of a charge carrier along both the first channel and the second channel.
9. An apparatus as claimed in claim 1 , wherein the monolithic semiconductor comprises
a first side comprising the first electrode portion;
a second side opposing the first side and comprising the second electrode portion and the third electrode portion;
a third side joining the first side and the second side and located closer to the second electrode portion than the third electrode portion; and
a fourth side opposing the third side and joining the first side and the second side and located closer to the third electrode portion than the second electrode portion.
10. An apparatus as claimed in claim 9 , wherein the third side and the fourth side are separated at the first side by a first distance and wherein the third side and the fourth side are separated at the second side by a second distance greater than the first distance.
11. An apparatus as claimed in claim 9 , wherein a separation between the third side and the fourth side increases linearly with distance from the first side.
12. An apparatus as claimed in claims 9 comprising a first gate electrode located at the third side and a second gate electrode located at the fourth side.
13. An apparatus as claimed in claim 1 , wherein the second side comprises a single electrode, wherein the second electrode portion is a portion of the single electrode and the third electrode portion is a portion of the single electrode.
14. An apparatus as claimed in claim 1 wherein the second electrode portion is distinct and separated from the third electrode portion.
15. An apparatus as claimed in claim 1 , arranged in a series cascaded monolithic semiconductors.
16. An apparatus as claimed in claim 1 , further comprising high frequency electronic circuitry configured to operate above 1×10^(9) Hz.