Semiconductor optical device, optical transmitter module, optical transceiver module, and optical transmission equipment
View Patent ↗Provided is a semiconductor optical device, which has a buried heterostructure structure and is formed in a structure capable of reducing a parasitic capacitance to further improve characteristics thereof, and also provided are an optical transmitter module, an optical transceiver module, and an optical transmission equipment. The semiconductor optical device includes a modulator portion for modulating light input along an emitting direction and radiating the modulated light, the modulator portion including: a mesa-stripe structure, which includes an active layer and extends in the emitting direction; and a buried layer provided adjacent to each side of the mesa-stripe structure, in which a distance between a lower surface of the buried layer and a lower surface of the active layer is 20% or more of a distance between the lower surface and an upper surface of the buried layer.
1. A semiconductor optical device, comprising a modulator portion for modulating light input along an emitting direction and radiating the modulated light,
the modulator portion comprising:
a mesa-stripe structure, which includes an active layer and extends in the emitting direction, where the active layer has a lower guide layer, a multiple quantum well (MQW) layer, and an upper light guide layer; and
a buried layer disposed adjacent to each side of the mesa-stripe structure,
wherein a distance between a lower surface of the buried layer and a lower surface of the active layer is at least 1 μm and also is 20% or more of a distance between the lower surface and an upper surface of the buried layer.
2. The semiconductor optical device according to claim 1 , wherein the buried layer is made of a semiconductor doped with one of iron and ruthenium as an impurity.
3. The semiconductor optical device according to claim 1 , wherein the active layer contains one of an InGaAsP based material and an InGaAlAs based material.
4. The semiconductor optical device according to claim 1 , wherein the modulator portion comprises one of an electro-absorption modulator and a Mach-Zehnder modulator.
5. The semiconductor optical device according to claim 1 , further comprising an oscillator portion which is monolithically-integrated with the modulator portion, for outputting light to the modulator portion.
6. The semiconductor optical device according to claim 5 , wherein the oscillator portion comprises a distributed feedback semiconductor laser.
7. A semiconductor optical device module, comprising the semiconductor optical device according to claim 1 .
8. An optical transmitter module, comprising the semiconductor optical device module according to claim 7 .
9. An optical transceiver module, comprising the semiconductor optical device module according to claim 7 .
10. An optical transmission equipment, comprising the optical transmitter module according to claim 8 .
11. An optical transmission equipment, comprising the optical transceiver module according to claim 9 .
12. The semiconductor optical device of claim 1 , wherein the distance between the lower surface of the buried layer and the lower surface of the active layer is 1.8 μm.
13. A semiconductor optical device, comprising a modulator portion for modulating light input along an emitting direction and radiating the modulated light,
the modulator portion comprising:
a mesa-stripe structure, which includes an active layer and extends in the emitting direction, where the active layer has a lower light guide layer, a multiple quantum well (MQW) layer, and an upper light guide layer; and
a buried layer disposed adjacent to each side of the mesa-stripe structure,
wherein a distance between a lower surface of the buried layer and a lower surface of the active layer is greater than or equal to 1 μm and less than or equal to 5 μm, and also is 20% or more of a distance between the lower surface and an upper surface of the buried layer.
14. The semiconductor optical device according to claim 13 , wherein the buried layer is made of a semiconductor doped with one of iron and ruthenium as an impurity.
15. The semiconductor optical device according to claim 13 , wherein the active layer contains one of an InGaAsP based material and an InGaAlAs based material.
16. The semiconductor optical device according to claim 13 , wherein the modulator portion comprises one of an electro-absorption modulator and a Mach-Zehnder modulator.
17. The semiconductor optical device according to claim 13 , further comprising an oscillator portion which is monolithically-integrated with the modulator portion, for outputting light to the modulator portion.
18. The semiconductor optical device according to claim 17 , wherein the oscillator portion comprises a distributed feedback semiconductor laser.
19. The semiconductor optical device of claim 13 , wherein the distance between the lower surface of the buried layer and the lower surface of the active layer is 1.8 μm.