Semiconductor device and method of manufacturing the same
A method of manufacturing a semiconductor device includes forming an insulating film over a semiconductor substrate, forming a capacitor including a lower electrode, a capacitor dielectric film including a ferroelectric material, and an upper electrode over the insulating film, forming a first protective insulating film over a side surface and upper surface of the capacitor by a sputtering method, and forming a second protective insulating film over the first protective insulating film by an atomic layer deposition method.
1. A method of manufacturing a semiconductor device, comprising:
forming an insulating film over a semiconductor substrate;
forming a capacitor over the insulating film, the capacitor including a lower electrode, a capacitor dielectric film including a ferroelectric material, and an upper electrode;
forming a first protective insulating film over a side surface and an upper surface of the capacitor by a sputtering method; and
forming a second protective insulating film over the first protective insulating film by an atomic layer deposition method,
wherein, in the forming of the second protective insulating film, the second protective insulating film is formed in an amorphous state and a temperature of the semiconductor substrate is set within a range of 200° C. or higher and 350° C. or lower.
2. The method of manufacturing a semiconductor device according to claim 1 , wherein, in the forming of the first protective insulating film, the first protective insulating film is formed in an amorphous state.
3. The method of manufacturing a semiconductor device according to claim 2 , wherein, in the forming of the first protective insulating film, a temperature of the semiconductor substrate is set within a range of 20° C. or higher and 50° C. or lower.
4. The method of manufacturing a semiconductor device according to claim 1 , further comprising:
performing a first annealing on the second protective insulating film in an atmosphere containing an oxidative gas after the forming of the second protective insulating film.
5. The method of manufacturing a semiconductor device according to claim 4 , wherein the forming of the second protective insulating film and the performing the first annealing are carried out in a same chamber without exposing the semiconductor substrate to an air.
6. The method of manufacturing a semiconductor device according to claim 4 , wherein the oxidative gas is any one of ozone and oxygen.
7. The method of manufacturing a semiconductor device according to claim 4 , wherein the first annealing is performed at a temperature of the semiconductor substrate within a range of 400° C. or higher and 700° C. or lower.
8. The method of manufacturing a semiconductor device according to claim 4 , further comprising:
performing a second annealing on the second protective insulating film in an atmosphere containing oxygen after the carrying out the first annealing.
9. The method of manufacturing a semiconductor device according to claim 8 , wherein the second annealing is performed at a temperature of the semiconductor substrate within a range of 500° C. or higher and 600° C. or lower.
10. The method of manufacturing a semiconductor device according to claim 1 , further comprising:
performing a third annealing on the first protective insulating film in an atmosphere containing an oxidative gas after the forming of the first protective insulating film and before the forming of the second protective insulating film.
11. The method of manufacturing a semiconductor device according to claim 10 , wherein the third annealing is carried out at a temperature of the semiconductor substrate within a range of 500° C. or higher and 700° C. or lower.
12. The method of manufacturing a semiconductor device according to claim 10 , wherein the oxidative gas is any one of ozone, oxygen, and nitrous oxide.
13. The method of manufacturing a semiconductor device according to claim 1 , wherein at least one of the first protective insulating film and the second protective insulating film is any of an alumina film, a titanium oxide film, a tantalum oxide film, a zirconium oxide film, an aluminum nitride film, and an aluminum oxynitride film.
14. The method of manufacturing a semiconductor device according to claim 1 , further comprising:
forming a third protective insulating film covering the capacitor dielectric film and the upper electrode before the forming of the first protective insulating film, wherein
in the forming of the first protective insulating film, the first protective insulating film is formed over the third protective insulating film.
15. The method of manufacturing a semiconductor device according to claim 1 , further comprising:
forming an interlayer insulating film over the second protective insulating film;
planarizing an upper surface of the interlayer insulating film; and
forming a fourth protective insulating film over the interlayer insulating film after the planarizing.
16. The method of manufacturing a semiconductor device according to claim 1 , wherein, in the forming of the first protective insulating film, the first protective insulating film is formed so as to be in contact with the side surface of the capacitor.
17. A method of manufacturing a semiconductor device, comprising:
forming an insulating film over a semiconductor substrate;
forming a capacitor over the insulating film, the capacitor including a lower electrode, a capacitor dielectric film including a ferroelectric material, and an upper electrode;
forming a first protective insulating film over a side surface and an upper surface of the capacitor by a sputtering method;
forming a second protective insulating film over the first protective insulating film by an atomic layer deposition method; and
performing a first annealing on the second protective insulating film in an atmosphere containing an oxidative gas after the forming of the second protective insulating film.
18. A method of manufacturing a semiconductor device, comprising:
forming an insulating film over a semiconductor substrate;
forming a capacitor over the insulating film, the capacitor including a lower electrode, a capacitor dielectric film including a ferroelectric material, and an upper electrode;
forming a first protective insulating film covering the capacitor dielectric film and the upper electrode;
forming a second protective insulating film over the first protective insulating film by a sputtering method;
forming a third protective insulating film over the second protective insulating film by an atomic layer deposition method,
wherein, in the forming of the third protective insulating film, the third protective insulating film is formed in an amorphous state and a temperature of the semiconductor substrate is set within a range of 200° C. or higher and 350° C. or lower.