IP Library › Granted Patent US 8,043,883
Granted Patent B2
US 8,043,883 · App. 13/109,653 · Granted Oct 25, 2011

Method for manufacturing solid-state imaging device having improved sensitivity and reduced flare

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Quick Facts
Patent No.
US 8,043,883
App. No.
13/109,653
Granted
Oct 25, 2011
Kind
B2
Abstract

Provided is a solid-state imaging device that realizes sensitivity improvement while maintaining flare prevention effect even when miniaturization of cell is advanced. The solid-state imaging device according to the present invention includes: light receiving units formed on a semiconductor substrate; an antireflection film arranged above the semiconductor substrate, except above the light receiving units; and microlenses arranged above the light receiving units, in which the antireflection film is formed at a position equal to or higher than a position of the microlenses.

Claims (17)

1. A method for manufacturing a solid-state imaging device, said method comprising:

forming light receiving units on a semiconductor substrate;

forming microlenses above the light receiving units; and

forming an antireflection film above the semiconductor substrate, except above the light receiving units, so as to reduce light reflection,

wherein, in said forming of the antireflection film, the antireflection film is formed at a position equal to or higher than a position of the microlenses.

2. The method for manufacturing the solid-state imaging device according to claim 1 ,

wherein, in said forming of the antireflection film, the antireflection film is formed by at least one of a lithography process, a dry etching process, and a process including deposition and lift-off.

3. The method for manufacturing the solid-state imaging device according to claim 1 ,

wherein, in said forming of the antireflection film, the antireflection film is formed in a same layer as a layer of the microlenses.

4. The method for manufacturing the solid-state imaging device according to claim 1 ,

wherein, in said forming of the antireflection film, the antireflection film is formed in a layer higher than a layer of the microlenses.

5. The method for manufacturing the solid-state imaging device according to claim 1 ,

wherein, in said forming of the antireflection film, the antireflection film is an antireflection filter.

6. The method for manufacturing the solid-state imaging device according to claim 1 ,

wherein, in said forming of the antireflection film, the antireflection film is a light absorption filter.

7. The method for manufacturing the solid-state imaging device according to claim 1 ,

wherein, in said forming of the antireflection film, the antireflection film is a black-color filter.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 3, 2014
From: PANASONIC CORPORATION (FORMERLY MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.)
To: GODO KAISHA IP BRIDGE 1
Reel/Frame 032152/0514 →