Laser pumping of thyristors for fast high current rise-times

1. An optically triggered semiconductor switch comprising:

a) an anode metallization layer;

b) a cathode metallization layer;

c) a semiconductor between the anode metallization layer and the cathode metallization layer, comprising at least four layers of alternating doping in a form P-N-P-N, in which an outer layer adjacent to the anode metallization layer forms an anode and an outer layer adjacent the cathode metallization layer forms a cathode;

in which the anode metallization layer has a window pattern of optically transparent material exposing the anode layer to light; wherein the window pattern comprises a plurality of windows of transparent material, each window having a top portion with a width, a bottom portion with a width, the top portion being connected to the bottom portion through a middle portion, wherein a width of the middle portion of the window is greater than the width of the top portion and the bottom portion of the window;

d) a photon source emitting light having a wavelength, the light emitted from the photon source being configured to match the window pattern of the anode metallization layer.

2. The switch of claim 1 in which the photon source comprises an array of laser diodes located such that light from the laser diodes matches the window pattern of the anode metallization layer.

3. The switch of claim 1 in which the photon source comprises at least one laser diode coupled to a light guide having outputs matching the window pattern of the anode metallization layer.

4. The switch of claim 1 , in which the wavelength of the photon source is selected to achieve an even distribution of photo-generated charge carriers throughout a thickness of a device.

5. The switch of claim 1 , in which a thickness of the P type layer near the anode side and the N and P type layers on the cathode side are selected to produce the fastest turn-on times.

6. A multi-stage optically triggered semiconductor switch, comprising a plurality of stages coupled in series, each comprising:

a) an anode metallization layer;

b) a cathode metallization layer;

c) a semiconductor between the anode metallization layer and the cathode metallization layer, comprising at least four layers of alternating doping in a form P-N-P-N, in which an outer layer adjacent to the anode metallization layer forms an anode and an outer layer adjacent the cathode metallization layer forms a cathode;

in which the anode metallization layer has a window pattern of optically transparent material exposing the anode layer to light wherein the window pattern comprises a plurality of windows of transparent material, each window having a top portion with a width, a bottom portion with a width, the top portion being connected to the bottom portion through a middle portion, wherein a width of the middle portion of the window is greater than the width of the top portion and the bottom portion of the window;

d) a photon source emitting light having a wavelength, the light emitted from the photon source being configured to match the window pattern of the anode metallization layer.

7. The switch of claim 6 , wherein the stages are coupled in series and stacked horizontally.

8. The switch of claim 6 , wherein the stages are coupled in series and stacked vertically.

9. The switch of claim 6 , in which the photon source comprises an array of laser diodes located such that light from the laser diodes matches the window pattern of the anode metallization layer for each of the stages.

10. The switch of claim 6 , in which the photon source comprises at least one laser diode coupled to a light guide having outputs matching the window pattern of the anode metallization layer of each of the stages.

11. An optically triggered semiconductor switch comprising:

a) an anode metallization layer;

b) a cathode metallization layer;

c) a semiconductor between the anode metallization layer and the cathode metallization layer, comprising at least four layers of alternating doping in a form P-N-P-N, in which an outer layer adjacent to the anode metallization layer forms an anode and an outer layer adjacent the cathode metallization layer forms a cathode;

in which the cathode metallization layer has a window pattern of optically transparent material exposing the cathode metallization layer to light wherein the window pattern comprises a plurality of windows of transparent material, each window having a top portion with a width, a bottom portion with a width, the top portion being connected to the bottom portion through a middle portion, wherein a width of the middle portion of the window is greater than the width of the top portion and the bottom portion of the window;

d) a photon source emitting light having a wavelength, the light emitted from the photon source being configured to match the window pattern of the cathode metallization layer.

12. The switch of claim 11 in which the photon source comprises an array of laser diodes located such that light from the laser diodes matches the window pattern of the cathode metallization layer.

13. The switch of claim 11 in which the photon source comprises at least one laser diode coupled to a light guide having outputs matching the window pattern of the cathode metallization layer.

14. The switch of claim 11 , in which the wavelength of the photon source is selected to achieve an even distribution of photo-generated charge carriers throughout a thickness of a device.

15. An optically triggered semiconductor switch comprising:

a) an anode metallization layer;

b) a cathode metallization layer;

c) a semiconductor between the anode metallization layer and the cathode metallization layer, comprising at least four layers of alternating doping in a form P-N-P-N, in which an outer layer adjacent to the anode metallization layer forms an anode and an outer layer adjacent the cathode metallization layer forms a cathode;

in which the cathode metallization layer and the anode metallization layer each have a window pattern of optically transparent material exposing the anode metallization layer and the cathode metallization layer to light wherein the window pattern comprises a plurality of windows of transparent material, each window having a top portion with a width, a bottom portion with a width, the top portion being connected to the bottom portion through a middle portion, wherein a width of the middle portion of the window is greater than the width of the top portion and the bottom portion of the window;

d) a photon source emitting light having a wavelength, the light emitted from the photon source being configured to match the window pattern of the cathode metallization layer and the anode metallization layer.

16. The switch of claim 15 in which the photon source comprises an array of laser diodes located such that light from the laser diodes matches the window pattern of the anode metallization layer and the cathode metallization layer.

17. The switch of claim 15 in which the photon source comprises at least one laser diode coupled to a light guide having outputs matching the window pattern of the anode metallization layer and the cathode metallization layer.

18. The switch of claim 15 , in which the wavelength of the photon source is selected to achieve an even distribution of photo-generated charge carriers throughout a thickness of a device.

19. A multi-stage optically triggered semiconductor switch, comprising a plurality of stages coupled in series, each comprising:

a) an anode metallization layer;

b) a cathode metallization layer;

c) a semiconductor between the anode metallization layer and the cathode metallization layer, comprising at least four layers of alternating doping in a form P-N-P-N, in which an outer layer adjacent to the anode metallization layer forms an anode and an outer layer adjacent the cathode metallization layer forms a cathode;

in which the anode metallization layer and the cathode metallization layer each have a window pattern of optically transparent material exposing the cathode metallization layer and the anode metallization layer to light wherein the window pattern comprises a plurality of windows of transparent material, each window having a top portion with a width, a bottom portion with a width, the top portion being connected to the bottom portion through a middle portion, wherein a width of the middle portion of the window is greater than the width of the top portion and the bottom portion of the window;

d) a photon source emitting light having a wavelength, the light emitted from the photon source being configured to match the window pattern of the anode metallization layer and the cathode metallization layer.

20. The switch of claim 19 , wherein the stages are coupled in series and stacked horizontally.

21. The switch of claim 19 , wherein the stages are coupled in series and stacked vertically.

22. The switch of claim 19 , in which the photon source comprises an array of laser diodes located such that light from the laser diodes matches the window pattern of the anode metallization layer and the cathode metallization layer for each of the stages.

23. The switch of claim 19 , in which the photon source comprises at least one laser diode coupled to a light guide having outputs matching the window pattern of the anode metallization layer and the cathode metallization layer of each of the stages.