Crosslinked hybrid gate dielectric materials and electronic devices incorporating same
View Patent ↗Disclosed are thin film transistor devices incorporating a crosslinked inorganic-organic hybrid blend material as the gate dielectric. The blend material, obtained by thermally curing a mixture of an inorganic oxide precursor sol and an organosilane crosslinker at relatively low temperatures, can afford a high gate capacitance, a low leakage current density, and a smooth surface, and can be used to enable satisfactory transistor device performance at low operating voltages.
1. A thin film transistor comprising:
a thin film semiconductor;
source and drain electrodes in contact with the thin film semiconductor;
a dielectric layer adjacent the thin film semiconductor, wherein the dielectric layer comprises a thermally cured product of a blend composition comprising an inorganic oxide precursor sol and an organosilane crosslinker; and
a gate electrode in contact with the dielectric layer;
wherein the inorganic oxide precursor sol comprises one or more metal oxide precursors, and wherein the one or more metal oxide precursors are present in the blend composition at a molar concentration in excess of the organosilane crosslinker.
2. The thin film transistor of claim 1 , wherein the metal oxide precursors are selected from metal chlorides, metal alkoxides, and combinations thereof.
3. The thin film transistor of claim 1 , wherein the metal oxide precursors comprise a metal selected from Zr, Ti, Hf, and Ta.
4. The thin film transistor of claim 1 , wherein the inorganic oxide precursor sol comprises a solvent or solvent mixture comprising an alcohol.
5. The thin film transistor of claim 1 , wherein the inorganic oxide precursor sol comprises a hydrolyzing catalyst.
6. The thin film transistor of claim 1 , wherein the one or more metal oxide precursors are present in the blend composition at a molar concentration between about 2 times and about 10 times of the molar concentration of the organosilane crosslinker.
7. The thin film transistor of claim 1 , wherein the organosilane crosslinker is functionalized with hydrolysable groups.
8. The thin film transistor of claim 1 , wherein the organosilane crosslinker has the formula:
(X) 3-m (Y) m Si—Z—Si(Y) m (X) 3-m ,
wherein:
m, at each occurrence, independently is selected from 0, 1, and 2;
X, at each occurrence, independently is selected from a halide, an amino group, an alkoxy group, and a carboxylate group;
Y, at each occurrence, independently is selected from H, an alkyl group, and a haloalkyl group; and
Z is a divalent organic group comprising 1 to 20 carbon atoms.
9. The thin film transistor of claim 1 , wherein the thermally cured product is obtained at a curing temperature of less than about 300° C.
10. The thin film transistor of claim 1 , wherein the thin film semiconductor comprises an organic semiconducting molecule or polymer.
11. The thin film transistor of claim 1 , wherein the thin film semiconductor comprises an inorganic oxide semiconductor.
12. The thin film transistor of claim 1 , wherein the gate electrode is deposited on a flexible substrate.
13. The thin film transistor of claim 1 , wherein the dielectric layer has a film thickness between about 10 nm and about 50 nm, and exhibits a capacitance per unit area of at least about 90 nF cm −2 .
14. The thin film transistor of claim 1 , wherein the dielectric layer has a dielectric constant of about 4.0 or higher.
15. The thin film transistor of claim 1 , wherein the thin film transistor exhibits a mobility of at least about 0.1 cm 2 /Vs and a current on/off ratio of at least about 10 3 at an operating voltage of about ±10 V or lower.
16. The thin film transistor of claim 1 , wherein the organosilane crosslinker is a bis(silyl)alkane comprising 4 to 10 carbon atoms.
17. The thin film transistor of claim 16 , wherein each silyl group of the bis(silyl)alkane is functionalized with at least one alkoxy group.
18. A thin film transistor comprising:
a thin film semiconductor;
source and drain electrodes in contact with the thin film semiconductor;
a dielectric layer adjacent the thin film semiconductor, wherein the dielectric layer comprises a thermally cured product of a blend composition comprising a zirconium oxide precursor sol and a bis(silyl)alkane; and
a gate electrode in contact with the dielectric layer;
wherein the zirconium oxide precursor sol comprises one or more zirconium oxide precursors selected from the group consisting of ZrCl 4 , ZrOCl 2 , and Zr(OR) 4 , wherein each R independently is a C 1-6 alkyl group, and wherein the one or more zirconium oxide precursors are present in the blend composition at a molar concentration in excess of the bis(silyl)alkane.
19. The thin film transistor of claim 18 , wherein the one or more zirconium oxide precursors are present in the blend composition at a molar concentration between about 2 times and about 10 times of the molar concentration of the bis(silyl)alkane.
20. The thin film transistor of claim 18 , wherein each silyl group of the bis(silyl)alkane is functionalized with at least one alkoxy group.