High speed laser crystallization of particles of photovoltaic solar cells
A system and method for enhancing the conversion efficiency of thin film photovoltaics. The thin film structure includes a photovoltaic absorbent layer covered by a confinement layer. A laser beam passes through the confinement layer and hits the photovoltaic absorbent layer. The laser can be pulsed to create localized rapid heating and cooling of the photovoltaic absorbent layer. The confinement layer confines the laser induced plasma plume creating a localized high-pressure condition for the photovoltaic absorbent layer. The laser beam can be scanned across specific regions of the thin film structure. The laser beam can be pulsed as a series of short pulses. The photovoltaic absorbent layer can be made of various materials including copper indium diselenide, gallium arsenide, and cadmium telluride. The photovoltaic absorbent layer can be sandwiched between a substrate and the confinement layer, and a molybdenum layer can be between the substrate and the photovoltaic absorbent layer.
1. A method for enhancing the conversion efficiency of thin film photovoltaics, the method comprising:
obtaining a thin film structure including a photovoltaic absorbent layer;
transmitting a laser beam along an optical path to hit the photovoltaic absorbent layer of the thin film structure;
pulsing the laser beam to create a localized rapid heating and cooling of the photovoltaic absorbent layer; and
transparently confining the photovoltaic absorbent layer to confine a laser induced plasma plume and create a localized high-pressure condition for the photovoltaic absorbent layer.
2. The method of claim 1 , wherein the photovoltaic absorbent layer is selected from at least one of copper indium diselenide, gallium arsenide, and cadmium telluride.
3. The method of claim 1 , wherein the thin film structure comprises the photovoltaic absorbent layer sandwiched between a substrate and a confinement layer, the confinement layer being substantially transparent to the laser beam.
4. The method of claim 3 , wherein the thin film structure further comprises a molybdenum layer between the substrate and the photovoltaic absorbent layer.
5. The method of claim 3 , wherein the confinement layer is made of glass.
6. The method of claim 1 , further comprising scanning the laser beam across a specific region of the thin film structure.
7. The method of claim 6 , wherein the scanning comprises moving the thin film structure using an X-Y stage.
8. The method of claim 6 , wherein the scanning comprises using a movable mirror to scan the laser beam across the thin film structure.
9. The method of claim 1 , wherein the pulsing comprises generating a series of laser beam pulses having a duration of approximately 5 nanoseconds.
10. The method of claim 9 , wherein the series of laser beam pulses comprises at least 20 pulses.