Light emitting device package and light unit having the same
Discussed is a semiconductor LED package. The semiconductor LED package includes a packet body having a cavity, a semiconductor light emitting device in the cavity of the package body; and a plurality of reflective frames, each of the reflective frames having a bottom frame in the cavity of the package body, and at least two sidewall frames extending from the bottom frame and inclined with respect to the bottom frame, wherein the plurality of reflective frames are electrically separated from each other.
1. A semiconductor light emitting diode package comprising:
a package body having a cavity;
a semiconductor light emitting device in the cavity of the package body; and
a plurality of reflective frames, each of the reflective frames comprising:
a bottom frame in the cavity of the package body, and
at least two side wall frames extending from the bottom frame and inclined with respect to the bottom frame,
wherein the plurality of reflective frames are electrically separated from each other.
2. The semiconductor light emitting diode package according to claim 1 , wherein the plurality of reflective frames are extended to an outer surface of the package body to function as electrodes.
3. The semiconductor light emitting diode package according to claim 1 , wherein the plurality of reflective frames are electrically connected to the semiconductor light emitting device.
4. The semiconductor light emitting diode package according to claim 1 , wherein the semiconductor light emitting device is mounted on at least one of the reflective frames.
5. The semiconductor light emitting diode package according to claim 1 , wherein the package body comprises a reflective frame partition that separates the plurality of reflective frames from each other in the cavity.
6. The semiconductor light emitting diode package according to claim 1 , wherein each of the plurality of reflective frames comprises a U-shaped metal plate.
7. The semiconductor light emitting diode package according to claim 6 , wherein a reflective material is plated on surfaces of the metal plates.
8. The semiconductor light emitting diode package according to claim 1 , wherein at least one of the side wall frames is inclined with respect to an axis perpendicular to the bottom frame.
9. The semiconductor light emitting diode package according to claim 8 , wherein the at least one of the side wall frames is inclined at an angle of 15° to 30° with respect to the axis perpendicular to the bottom frame.
10. The semiconductor light emitting diode package according to claim 1 , wherein the package body comprises at least one selected from the group consisting of PPA (polyphthalamid), PA9T (polyamid 9T), liquid crystal polymer and SPS (syndiotactic polystyrene).
11. The semiconductor light emitting diode package according to claim 1 , wherein an interval between the at least two side wall frames of each of the reflective frames is 600 μm to 850 μm.
12. The semiconductor light emitting diode package according to claim 1 , wherein the cavity comprises a depth of 250 μm to 700 μm.