IP Library Granted Patent US 8,758,005
Granted Patent B2
US 8,758,005 · App. 13/115,758 · Granted Jun 24, 2014

Imprint mask, method for manufacturing the same, and method for manufacturing semiconductor device

Inventors: Masamitsu Itoh (Kanagawa-ken, JP); Shingo Kanamitsu (Kanagawa-ken, JP)
Assignee: Kabushiki Kaisha Toshiba
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Quick Facts
Patent No.
US 8,758,005
App. No.
13/115,758
Granted
Jun 24, 2014
Kind
B2
Abstract

According to one embodiment, an imprint mask includes a quartz plate. The quartz plate has a plurality of concave sections formed in part of an upper surface on the quartz plate, and impurities are contained in a portion between the concave sections in the quartz plate.

Claims (7)

1. An imprint mask, comprising a quartz plate, the quartz plate having a plurality of concave sections formed in part of an upper surface on the quartz plate, impurities being contained in a first portion of the quartz plate between the concave sections, and a concentration profile of the impurities in the first portion and a second portion corresponding to a region immediately under the first portion in the quartz plate has a peak inside the first portion in a thickness direction of the quartz plate.

2. The mask according to claim 1 , wherein the impurities are also contained in a third portion corresponding to a region immediately under each of the concave sections in the quartz plate.

3. The mask according to claim 1 , wherein a content of the impurities in a third portion corresponding to a region immediately under each of the concave sections in the quartz plate is smaller than a content of the impurities in the first portion bet and the second portion.

4. The mask according to claim 1 , wherein the first portion contains a metal.

5. The mask according to claim 4 , wherein the metal is one or more metals selected from the group consisting of chromium, tantalum, and ruthenium.

6. The mask according to claim 1 , wherein the impurities are one element selected from the group consisting of gallium, xenon, antimony, argon, silicon, nitrogen, and lead.

7. The mask according to claim 1 , wherein the plurality of concave sections is a first plurality of concave sections in a first part of the upper surface of the quartz plate, the quartz plate further comprises a second plurality of concave sections in a second part of the upper surface of the quartz plate, and the impurities are not contained in a portion corresponding to a region immediately under the second part of the upper surface of the quartz plate.

Assignments (5)
MERGER Recorded Jan 22, 2021
From: TOSHIBA MEMORY CORPORATION
To: K.K. PANGEA
Reel/Frame 055659/0471 →
CHANGE OF NAME AND ADDRESS Recorded Jan 22, 2021
From: TOSHIBA MEMORY CORPORATION
To: KIOXIA CORPORATION
Reel/Frame 055669/0001 →
CHANGE OF NAME AND ADDRESS Recorded Jan 22, 2021
From: K.K. PANGEA
To: TOSHIBA MEMORY CORPORATION
Reel/Frame 055669/0401 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 24, 2017
From: KABUSHIKI KAISHA TOSHIBA
To: TOSHIBA MEMORY CORPORATION
Reel/Frame 043709/0035 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 26, 2011
From: ITOH, MASAMITSU; KANAMITSU, SHINGO
To: KABUSHIKI KAISHA TOSHIBA
Reel/Frame 026346/0283 →
Priority Claims (1)
JP 2010-121446 · May 27, 2010 · national
Continuity (1)
Related Publication 20110290134A1 · Dec 1, 2011