IP Library Granted Patent US 8,680,531
Granted Patent B2
US 8,680,531 · App. 13/115,883 · Granted Mar 25, 2014

Thin film transistor and display device using the same and method for manufacturing the same

View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 8,680,531
App. No.
13/115,883
Granted
Mar 25, 2014
Kind
B2
Abstract

A thin film transistor according to an example embodiment includes: a substrate body; a semiconductor layer formed on the substrate body and comprising a polycrystalline silicon film having a surface resistance from about 2000 ohm/sq to about 8000 ohm/sq; and a source electrode and a drain electrode each contacted with the semiconductor layer and comprising a metallic material having a resistance from about 350 to about 2000 ohm.

Claims (23)

1. A thin film transistor, comprising:

a substrate body;

a semiconductor layer formed on the substrate body and comprising a polycrystalline silicon film having a surface resistance from about 2000 ohm/sq to about 8000 ohm/sq; and

a source electrode and a drain electrode, each in contact with the semiconductor layer and comprising a metallic material having a resistance from about 350 to about 2000 ohm.

2. The thin film transistor of claim 1 , wherein:

the semiconductor layer in contact with each of the source electrode and the drain electrode is in an inactivated state.

3. The thin film transistor of claim 2 , wherein:

the metallic material has a work function from about 4.1 eV to about 4.5 eV.

4. The thin film transistor of claim 1 , wherein: the substrate body comprises a plastic material.

5. A display device, comprising:

a substrate body;

a semiconductor layer positioned on the substrate body and comprising a polycrystalline silicon film having a surface resistance from about 2000 ohm/sq to about 8000 ohm/sq; and

a source electrode and a drain electrode each in contact with the semiconductor layer and comprising a metallic material having a resistance from about 350 to about 2000 ohm.

6. The display device of claim 5 , wherein:

the semiconductor layer in contact with each of the source electrode and the drain electrode is in an inactivated state.

7. The display device of claim 5 , wherein:

the metallic material has a work function from about 4.1 eV to about 4.5 eV.

8. The display device of claim 5 , wherein:

the substrate body comprises a plastic material.

9. The display device of claim 8 , further comprising:

an organic light emitting diode formed on the substrate body.

10. The display device of claim 8 , further comprising:

a liquid crystal layer formed on the substrate body.

Assignments (2)
MERGER Recorded Aug 31, 2012
From: SAMSUNG MOBILE DISPLAY CO., LTD.
To: SAMSUNG DISPLAY CO., LTD.
Reel/Frame 028921/0334 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 26, 2011
From: LEE, JAE-SEOB; PARK, YONG-HWAN; PYO, YOUNG-SHIN
To: SAMSUNG MOBILE DISPLAY CO., LTD.
Reel/Frame 026345/0103 →