PHOTORESIST COMPOSITION AND METHOD OF FORMING PATTERN USING THE SAME
A photoresist composition and method of forming pattern using the same are provided. The photoresist composition contains an alkali-soluble novolac resin, a photosensitizer including a compound of Chemical Formula 1, and a solvent.
1 . A photoresist composition comprising:
an alkali-soluble novolac resin;
a photosensitizer including a compound of Chemical Formula 1; and
a solvent.
2 . The photoresist composition of claim 1 , wherein the compound of Chemical Formula 1 is formed by a condensation reaction between a compound of Chemical Formula 2 (where R is a hydrogen atom, an alkyl group having a carbon number of 1 to 4, an alkenyl group having a carbon number of 2 to 4, a cycloalkyl group having a carbon number of 3 to 8, or an allyl group having a carbon number of 6 to 12) and a compound of Chemical Formula 3.
3 . The photoresist composition of claim 1 , wherein the photoresist composition contains the alkali-soluble novolac resin present in an amount of 5 to 15 wt %, the photosensitizer present in an amount of 1 to 10 wt % and a residual amount of the solvent.
4 . The photoresist composition of claim 1 , wherein the novolac resin includes meta-cresol and para-cresol and a mixing ratio of the meta-cresol to the para-cresol is in the range of 40:60 to 60:40.
5 . The photoresist composition of claim 1 , wherein the compound of Chemical Formula 1 absorbs h-line light having a wavelength of 405 nm.
6 . The photoresist composition of claim 1 , further comprising at least one selected from the group consisting of a surfactant, an adhesive enhancer, a plasticizer and a sensitizer.
7 . The photoresist composition of claim 1 , wherein the photoresist composition is of a positive type.
8 . The photoresist composition of claim 1 , wherein the alkali-soluble novolac resin has a monodisperse polystyrene-equivalent weight-average molecular weight ranging from 2,000 to 50,000.
9 . A method of forming a pattern, comprising:
forming a photoresist film by coating a pattern formation film with a photoresist composition containing an alkali-soluble novolac resin, a photosensitizer including a compound of Chemical Formula 1, and a solvent;
exposing the photoresist film to light;
developing the photoresist film to form a photoresist pattern; and
patterning the pattern formation film using the photoresist pattern as an etching mask.
10 . The method of claim 9 , wherein the compound of Chemical Formula 1 is formed by a condensation reaction between a compound of Chemical Formula 2 (where R is a hydrogen atom, an alkyl group having a carbon number of 1 to 4, an alkenyl group having a carbon number of 2 to 4, a cycloalkyl group having a carbon number of 3 to 8, or an allyl group having a carbon number of 6 to 12) and a compound of Chemical Formula 3.
11 . The method of claim 9 , wherein the photoresist composition contains the alkali-soluble novolac resin present in an amount of 5 to 15 wt %, the photosensitizer present in an amount of 1 to 10 wt % and a residual amount of the solvent.
12 . The method of claim 9 , wherein the novolac resin includes meta-cresol and para-cresol and a mixing ratio of the meta-cresol to the para-cresol is in a range of 40:60 to 60:40.
13 . The method of claim 9 , wherein said exposing the photoresist film is performed by using a digital exposure device.
14 . The method of claim 13 , wherein the light used in exposing the photoresist film to light has a wavelength of 405 nm.
15 . The method of claim 13 , wherein the digital exposure device includes a digital micromirror device.
16 . The method of claim 9 , further comprising at least one selected from the group consisting of a surfactant, an adhesive enhancer, a plasticizer and a sensitizer.
17 . The method of claim 9 , wherein the photoresist pattern is formed in an area onto which light is not irradiated.
18 . The method of claim 9 , wherein the alkali-soluble novolac resin has a monodisperse polystyrene-equivalent weight-average molecular weight ranging from 2,000 to 50,000.
19 . The method of claim 9 , wherein the photoresist pattern includes a first width and a second width, and an absolute value of a difference between the first width and the second width is equal to or smaller than 0.2.