Optoelectronic device

1. An optoelectronic device comprising:

at least one luminescence diode chip which emits electromagnetic radiation during operation of the optoelectronic device,

a reflector wall or absorber wall which laterally completely surrounds the at least one luminescence diode chip,

a connection carrier on which the at least one luminescence diode chip is fixed at least indirectly and via which electrical contact is made with the at least one luminescence diode chip, and

at least one shield that shields against stray radiation which laterally surrounds the luminescence diode chip only in places,

wherein each shield is integral with a component of the optoelectronic device,

the reflector wall or absorber wall has a non-uniform height (H),

the at least one shield is formed, at least in places, by a shielding region of the reflector wall or absorber wall, the shielding region being higher than the rest of the reflector wall or absorber wall,

the reflector wall or absorber wall is arranged within a lens for the at least one luminescence diode chip,

the connection carrier is formed by a circuit board comprising an electrically insulating base body into which or onto which is structured at least one electrical connection location and/or at least one conductor track by which electrical contact is made with the at least one luminescence diode chip, and

the reflector wall or absorber wall is integral with the insulating base body of the circuit board.

2. The optoelectronic device as claimed in claim 1 ,

wherein

the at least one shield is formed by a shielding region of the connection carrier at least in places.

3. The optoelectronic device as claimed in claim 2 , wherein the connection carrier has a bend connecting the shielding region of the connection carrier to a remaining portion of the connection carrier.

4. The optoelectronic device as claimed in claim 2 , wherein the shielding region and the rest of the connection carrier form an angle (α) of less than or equal to 110° with one another.

5. The optoelectronic device as claimed in claim 1 , wherein the reflector wall or absorber wall is in a potting for the at least one luminescence diode chip.

6. The optoelectronic device as claimed in claim 1 , further comprising:

a housing base body having a cavity in which the at least one luminescence diode chip is arranged, wherein

the at least one shield is formed by a shielding region of the housing base body at least in places.

7. The optoelectronic device as claimed in claim 6 , wherein the shielding region is injection-molded or transfer-molded together with a remaining portion of the housing base body.

8. The optoelectronic device as claimed in claim 1 , further comprising:

a lens for the at least one luminescence diode chip,

wherein the at least one shield is formed by a shielding region of the lens at least in places.

9. The optoelectronic device as claimed in claim 8 , wherein the lens is polarizing, absorbent and/or reflective in the shielding region.

10. The optoelectronic device as claimed in claim 1 , wherein the shield, at least in a reflection region facing the at least one luminescence diode chip is reflective to electromagnetic radiation generated by the luminescence diode chip during operation of the optoelectronic device.

11. The optoelectronic device as claimed in claim 1 , wherein the at least one shield, at least in an absorption region facing the at least one luminescence diode chip is absorbent to electromagnetic radiation generated by the luminescence diode chip during operation of the optoelectronic device.

12. The optoelectronic device as claimed in claim 1 , wherein the at least one shield has a curvature.

13. The optoelectronic device as claimed in claim 12 , wherein the shield diverts rainwater around a radiation exit area of the optoelectronic device.

14. The optoelectronic device as claimed in claim 3 , wherein the shielding region and the rest of the connection carrier form an angle (α) of less than or equal to 110° with one another.

15. The optoelectronic device as claimed in claim 1 , wherein the reflector wall or absorber wall is in a potting for the at least one luminescence diode chip.