Radiofrequency plasma reactor and method for manufacturing vacuum process treated substrates

1. A radiofrequency plasma reactor comprising a vacuum recipient and therein a first electrode arrangement having a first electrode surface and a second electrode arrangement having a second electrode surface, said first and second electrode surfaces being distant from each other and facing each other, thereby defining a plasma discharge space there between, the first electrode arrangement comprising a metal Rf supply electrode and dielectric spacing, the metal Rf supply electrode being operationally connectable to a first pole of an Rf power supply and having a metal surface extending substantially along and distant from said first electrode surface, the dielectric spacing being upon said metal surface and extending substantially along said metal surface, a thickness of said dielectric spacing being perpendicular to said metal surface and varying along said metal surface, said second electrode arrangement being operationally connectable to a second pole of an Rf power supply,

wherein said first electrode surface comprises a multitude of surfaces of a multitude of metal members residing on said dielectric spacing, at least the majority of said members being mounted in an electrically floating manner.

2. The reactor of claim 1 , wherein said first and second electrode surfaces are distant with a substantially constant distance along said surfaces.

3. The reactor of claims 1 or 2 , wherein said first electrode surface is substantially a plane.

4. The reactor of claim 1 , wherein said dielectric spacing comprises dielectric solid material.

5. A radiofrequency plasma reactor, comprising:

a vacuum recipient, comprising a first electrode arrangement having a first electrode surface and a second electrode arrangement having a second electrode surface, the first and second electrode surfaces being distant from each other and facing each other, thereby defining a plasma discharge space there between, the first electrode arrangement comprising a metal Rf supply electrode and dielectric spacing, the metal Rf supply electrode being operationally connectable to a first pole of an Rf power supply and having a metal surface extending substantially along and distant from the first electrode surface, the dielectric spacing being upon the metal surface and extending substantially along the metal surface, a thickness of the dielectric spacing being perpendicular to the metal surface and varying along the metal surface, the second electrode arrangement being operationally connectable to a second pole of an Rf power supply,

wherein the first electrode surface comprises a plurality of surfaces of a plurality of metal members residing on the dielectric spacing, a majority or more of the metal members being mounted in an electrically floating manner, and

wherein the solid dielectric material, which is buried behind the members, comprises a not-ceramic dielectric material.

6. The reactor of claim 1 , wherein a part of the members comprises a tube arrangement operationally connectable to a source for a cooling medium.

7. The reactor of claim 1 , wherein said metal surface is a smooth or a stepped surface.

8. A radiofrequency plasma reactor, comprising:

a vacuum recipient, comprising a first electrode arrangement having a first electrode surface and a second electrode arrangement having a second electrode surface, the first and second electrode surfaces being distant from each other and facing each other, thereby defining a plasma discharge space there between, the first electrode arrangement comprising a metal Rf supply electrode and dielectric spacing, the metal Rf supply electrode being operationally connectable to a first pole of an Rf power supply and having a metal surface extending substantially along and distant from the first electrode surface, the dielectric spacing being upon the metal surface and extending substantially along the metal surface, a thickness of the dielectric spacing being perpendicular to the metal surface and varying along the metal surface, the second electrode arrangement being operationally connectable to a second pole of an Rf power supply,

wherein the first electrode surface comprises a plurality of surfaces of a plurality of metal members residing on the dielectric spacing, a majority or more of the metal members being mounted in an electrically floating manner, and

wherein the metal surface comprises intrusions of different depths.

9. The reactor of claim 1 , wherein interspaces between said members are void and/or interspaces between said tiles are filled with a dielectric solid material.

10. The reactor of claim 1 , further comprising a substrate holder on said second electrode surface.

11. The reactor of claim 1 , said second electrode surface being of a metal.

12. The reactor of claims 1 or 10 , comprising a substrate holder with an extent of at least 1 m 2 .

13. A vacuum treatment system comprising a radiofrequency plasma reactor according to any one of claims 1 , 5 , and 8 , said first and second poles being operationally connected to an Rf generator arrangement operating at a frequency of at least 10 MHz.

14. A method for manufacturing a vacuum process treated substrate for a TFT or for a solar cell panel with an extent of at least 1 m 2 , the method comprising the steps of:

providing a radiofrequency plasma reactor according to any one of claims 1 , 5 , and 8 ;

operationally connecting said poles to an Rf power source operating at a frequency of at least 10 MHz;

providing a substrate to be treated into said plasma discharge space;

inletting a gas or gas mixture into said plasma discharge space; and

treating said substrate in a plasma in said plasma discharge space, electrically supplied by said power source and in an atmosphere containing said gas.

15. The vacuum treatment system of claim 14 , wherein the Rf generator arrangement operates at a frequency greater than 20 MHz.

16. The vacuum treatment system of claim 14 , wherein the Rf generator arrangement operates at second or greater order harmonies of 13.56 MHz.

17. The reactor of claim 1 , wherein the dielectric spacing has a curved cross-section.

18. The reactor of claim 1 , wherein a shape of the dielectric spacing corresponds with a shape of the metal members residing on the dielectric spacing.

19. The reactor of claim 1 , wherein the dielectric spacing comprises separate parts according to a shape of the metal members.