Frame-shaped MEMS piezoresistive resonator
A novel Si MEMS piezoresistive resonator is described. The resonator has a shape of a frame, such as a ring or a polygon frame, which has two or more anchors. Electrodes located at the outer or inner rim of the resonant structure are used to excite the structure electrostatically into resonance with a desired mode shape. One or plurality of locally doped regions on the structure is used for piezoresistive readout of the signal. In the most preferred embodiments, the structure is a ring, which has four anchors, two electrodes and four piezoresistive regions at different segments of the structure. The piezoresistive regions are alternatively located at the outer rim and inner rim of the structure in such a way that the piezoresistive signals of the same sign from different regions can be collected. Advantages of this device are large readout signal, large electrode area, robustness, suppressed out-of-plane vibration and larger usable linear range.
1. MEMS piezoresistive resonator, comprising:
a single piece resonator having a frame shape chosen from the group consisting of:
a circular hsape and a symmetrical polygonal shape
at least two anchors, and
at least one electrode for exciting the resonator,
wherein a resistivity of a resonator material is at at least one first location relatively high and/or wherein the resistivity of resonator material is at at least one second location relatively low.
2. MEMS piezoresistive resonator according to claim 1 , further comprising a plurality of symmetrically located anchor points.
3. MEMS piezoresistive resonator according to claim 1 , wherein the resonator includes a material that is locally N- and/or P-type doped.
4. MEMS piezoresistive resonator according to claim 1 , which resonator is divided by a plurality of anchor points into n symmetrical elements, wherein n is an even integer.
5. MEMS piezoresistive resonator according to claim 1 , wherein in a vicinity of an anchor point the resistivity of the resonator material is locally relatively low and/or wherein in a first area between a plurality of anchor points the resistivity of resonator material is relatively high and/or wherein in a second area between a plurality of anchor points the resonator material is piezoresistive.
6. Device comprising a MEMS piezoresistive resonator according to claim 1 .
7. MEMS piezoresistive resonator according to claim 1 , wherein the resonator is a silicon resonator.
8. MEMS piezoresistive resonator according to claim 1 , wherein the resonator has a form of a frame which has a shape that is one of circular, square, rectangular, hexagonal, octagonal, and decagonal.
9. Method of operating a MEMS piezoresistive resonator having a single piece resonator with a frame shape chosen from the group consisting of a circular shape and a symmetrical polygonal shape; and having at least two anchors, and at least one electrode for exciting the resonator, a resistivity of a resonator material at at least one first location being relatively high and/or the resistivity of the resonator material at at least one second location being relatively low, comprising:
applying a combination of AC and DC excitation voltages,
sending an electrical input current through the frame, and
sensing a resistance change within the frame.
10. Method according to claim 9 , wherein the resonator is operated to vibrate in a flexural mode shape.
11. Method according to claim 9 , whereby alternating segments of the resonator contract and extend at a certain point in time during operation.
12. Method of minimizing vibration energy loss by operating a resonator according to claim 9 .