Silicon-based thin film solar cell and method for manufacturing same
View Patent ↗A method for manufacturing a silicon-based thin film solar cell including a crystalline silicon photoelectric conversion unit which contains a p-type layer ( 4 p ), a crystalline i-type silicon photoelectric conversion layer ( 4 ic ), and an n-type layer ( 4 nc ) stacked in this order from a transparent substrate side is provided. In one example, an n-type silicon-based thin film layer ( 4 na ) is formed on the crystalline i-type silicon photoelectric conversion layer ( 4 ic ), the n-type silicon-based thin film layer ( 4 na ) having an n-type silicon alloy layer having a film thickness of 1-12 nm and being in contact with the crystalline i-type silicon photoelectric conversion layer.
1. A method for manufacturing a hybrid silicon-based thin film solar cell including an amorphous silicon photoelectric conversion unit and a crystalline silicon photoelectric conversion unit stacked on a transparent substrate side, the method comprising steps of:
in an amorphous unit formation step, forming the amorphous silicon photoelectric conversion unit;
in a crystalline unit formation step, forming the crystalline silicon photoelectric conversion unit on the amorphous silicon photoelectric conversion unit;
wherein the amorphous unit formation step comprises a step of forming a first p-type layer, an amorphous i-type silicon photoelectric conversion layer and a first n-type layer, in this order;
wherein the crystalline unit formation step comprises a step of forming a second p-type layer, a crystalline i-type silicon photoelectric conversion layer, an n-type silicon-based thin film layer, and a second n-type layer, in this order;
wherein the n-type silicon-based thin film layer includes an n-type silicon alloy layer and an n-type amorphous silicon layer thereon, the n-type silicon alloy layer being in contact with the crystalline i-type silicon photoelectric conversion layer and having a film thickness of 1 to 12 nm; and
wherein the second n-type layer formed on the n-type amorphous silicon layer of the n-type silicon-based thin film layer is an n-type microcrystalline silicon layer.
2. The method for manufacturing a silicon-based thin film solar cell according to claim 1 , wherein the n-type amorphous silicon layer is formed so as to have a film thickness which is 60% or more of a film thickness of a whole of the n-type silicon-based thin film layer.
3. The method for manufacturing a silicon-based thin film solar cell according to claim 1 , wherein the n-type silicon alloy layer consists essentially of a hydrogen element, a silicon element, and one or more elements selected from oxygen, carbon and nitrogen.
4. The method for manufacturing a silicon-based thin film solar cell according to claim 1 , wherein the n-type silicon alloy layer is an n-type amorphous silicon carbide layer.
5. The method for manufacturing a silicon-based thin film solar cell according to claim 1 , wherein the crystalline i-type silicon photoelectric conversion layer is formed at an average film formation speed of 0.5 nm/sec or more.
6. A silicon-based thin film solar cell produced by the method of manufacturing a silicon-based thin film solar cell according to claim 1 .
7. The silicon-based thin film solar cell according to claim 6 , wherein, in a Raman spectrum measured by irradiating the crystalline i-type silicon photoelectric conversion layer with a laser having a wavelength of 633 nm from a side opposite to the transparent substrate, a peak present at 520 cm −1 exhibits a peak intensity of 4.8 times or more of an average intensity at 480 to 490 cm −1 .