Semiconductor light-emitting element array including a semiconductor rod
Semiconductor surface emitting elements having a plurality of wavelengths being manufactured on a signal substrate through MOVPE selective growth. More specifically, provided is a semiconductor light emitting element array which comprises; a semiconductor crystal substrate; an insulating film disposed on a surface of the substrate, the insulating film being divided into two or more regions, each of which having two or more openings exposing the surface of the substrate; semiconductor rods extending from the surface of the substrate upward through the openings, the semiconductor rods each having an n-type semiconductor layer and a p-type semiconductor layer being laminated in its extending direction, thereby providing a p-n junction; a first electrode connected to the semiconductor crystal substrate; and a second electrode connected to upper portions of the semiconductor rods; wherein the heights of the semiconductor rods as measured from the substrate surface vary by each of the two or more regions.
1. A semiconductor light-emitting element array, comprising:
a semiconductor crystal substrate;
an insulating film disposed on a surface of the semiconductor crystal substrate,
the insulating film being separated into two or more regions,
each of the two or more regions having two or more openings exposing the surface of the substrate;
a semiconductor rod extending from the surface of the substrate upward through each of the openings, the semiconductor rod having an n-type semiconductor layer and a p-type semiconductor layer being laminated in its extending direction, thereby providing a p-n junction;
a first electrode connected to the semiconductor crystal substrate; and
a second electrode connected to an upper portion of the semiconductor rod,
wherein the height of the semiconductor rod as measured from the substrate surface varies among the two or more regions, and wherein an average area of the openings varies among the two or more regions.
2. A semiconductor light-emitting element array, comprising:
a semiconductor crystal substrate;
an insulating film disposed on a surface of the semiconductor crystal substrate,
the insulating film being separated into two or more regions,
each of the two or more regions having two or more openings exposing the surface of the substrate;
a semiconductor rod extending from the surface of the substrate upward through each of the openings, the semiconductor rod having an n-type semiconductor layer and a p-type semiconductor layer being laminated in its extending direction, thereby providing a p-n junction;
a first electrode connected to the semiconductor crystal substrate; and
a second electrode connected to an upper portion of the semiconductor rod,
wherein the height of the semiconductor rod as measured from the substrate surface varies among the two or more regions, wherein an average center-to-center distance of the openings varies among the two or more regions.
3. The semiconductor light-emitting element array according to claim 1 or 2 , wherein the semiconductor rod has a hetero-junction.
4. The semiconductor light-emitting element array according to claim 1 or 2 , wherein the semiconductor rod has a quantum well structure.
5. The semiconductor light-emitting element array according to claim 1 or 2 , wherein the semiconductor crystal substrate is formed by a semiconductor material selected from the group consisting of GaAs, InP, Si, InAs, GaN, SiC, and Al 2 O 3 , and
the surface of the substrate where the insulating film is provided is a crystal axis (111) surface.
6. The semiconductor light-emitting element array according to claim 1 or 2 , wherein the semiconductor rod is formed by metal organic chemical vapor deposition or molecular beam epitaxy.
7. The semiconductor light-emitting element array according to claim 1 or 2 , wherein
the first electrode is an n-electrode, and
the second electrode is a p-electrode and a transparent electrode.
8. The semiconductor light-emitting element array according to claim 1 or 2 , wherein
the first electrode is a p-electrode, and
the second electrode is an n-electrode and a transparent electrode.
9. A method of manufacturing the semiconductor light-emitting element array according to claim 1 or 2 , comprising the steps of:
A) preparing the semiconductor crystal substrate with a crystal axis (111) surface covered by the insulating film,
the insulating film being divided into two or more regions,
each of the two or more regions having two or more openings exposing the crystal axis (111) surface; and
B) forming the semiconductor rod from the surface of the semiconductor crystal substrate covered by the insulating film by metal organic chemical vapor deposition or molecular beam epitaxy, including the steps of forming the n-type semiconductor layer and forming the p-type semiconductor layer.
10. An optical transmitter, comprising:
the semiconductor light-emitting element array according to claim 1 or 2 , and
an optical waveguide disposed in each of the two or more regions and receiving light emission from the semiconductor rod located in the respective two or more regions.
11. An optical transmitter, comprising:
the semiconductor light-emitting element array according to claim 1 or 2 , and
an optical waveguide for receiving light emission from the semiconductor rod located in the respective two or more regions.
12. An optical transmitter, comprising:
the semiconductor light-emitting element array according to claim 1 or 2 ;
an optical multiplexer for multiplexing light emission from the semiconductor rods located the respective two or more regions; and
an optical waveguide for receiving light emission multiplexed in the multiplexer.
13. An illuminator, comprising:
the semiconductor light-emitting array according to claim 1 or 2 ; and
an optical waveguide for receiving light emission from the semiconductor rods located in the respective two or more regions.
14. An illuminator, comprising:
the semiconductor light-emitting element array according to claim 1 or 2 ;
an optical multiplexer for multiplexing light emission from the semiconductor rods located in the respective two or more regions; and
an optical waveguide for receiving light emission multiplexed in the multiplexer.