Elastic wave element and electronic device using the same
View Patent ↗An elastic wave device has a convex portion on the top face of a first dielectric layer over an IDT electrode when the elastic wave device has a structure of a boundary wave device in which a film thickness of a second dielectric layer is not less than 1.6 times as much as a pitch width of the IDT electrode. This convex portion increases an electromechanical coupling coefficient of SH wave that is the major wave. Accordingly, good filter characteristics can be easily achieved.
1. An elastic wave device comprising:
a piezoelectric substrate;
an IDT electrode disposed on the piezoelectric substrate;
a first dielectric layer disposed on the piezoelectric substrate, the first dielectric layer covering the IDT electrode and being made of a medium with a frequency-temperature characteristic opposite to that of the piezoelectric substrate; and
a second dielectric layer disposed on the first dielectric layer, the second dielectric layer being made of a medium that propagates a transverse wave faster than a speed of a transverse wave propagating on the first dielectric layer;
wherein the first dielectric layer has a convex portion on a top face of the first dielectric layer, the convex portion being provided over the IDT electrode; and
wherein a relation of one of
0 <t 1≦0.28λ and 0 <t 2≦1.5 h , and
0.28 <t 1≦0.3λ and 0 <t 2≦0.58 h
is satisfied, where
t 1 is a height from a boundary face between the piezoelectric substrate and the first dielectric layer to a bottom end of the convex portion,
t 2 is a height from a top end of the convex portion to the bottom end of the convex portion,
h is a film thickness of the IDT electrode, and
λ is a wavelength of a major wave excited by the IDT electrode.
2. The elastic wave device of claim 1 ,
wherein
a film thickness of the second dielectric layer is not less than 1.6 times as much as a pitch width of the IDT electrode.
3. The elastic wave device of claim 1 ,
wherein
a relation of
0.6 ≦L 1 /p 1≦1.8 is satisfied,
where p 1 is an electrode finger width of the IDT electrode, and
L 1 is a width at the bottom end of the convex portion.
4. The elastic wave device of claim 1 ,
wherein
a relation of L 2 <L 1 is satisfied, where L 2 is a width at the top end of the convex portion, and L 1 is a width at the bottom end of the convex portion.
5. An elastic wave device comprising:
a piezoelectric substrate;
an IDT electrode disposed on the piezoelectric substrate;
a first dielectric layer disposed on the piezoelectric substrate, the first dielectric layer covering the IDT electrode and being made of a medium with a frequency-temperature characteristic opposite to that of the piezoelectric substrate; and
a second dielectric layer disposed on the first dielectric layer, the second dielectric layer being made of a medium that propagates a transverse wave faster than a speed of a transverse wave propagating on the first dielectric layer;
wherein the first dielectric layer has a convex portion on a top face of the first dielectric layer, the convex portion being provided over the IDT electrode; and
wherein a relation of L 2 <L 1 is satisfied where L 2 is a width at the top end of the convex portion, and L 1 is a width at the bottom end of the convex portion.
6. An elastic wave device comprising:
a piezoelectric substrate;
an IDT electrode disposed on the piezoelectric substrate;
a first dielectric layer disposed on the piezoelectric substrate, the first dielectric layer covering the IDT electrode and being made of a medium with a frequency-temperature characteristic opposite to that of the piezoelectric substrate; and
a second dielectric layer disposed on the first dielectric layer, the second dielectric layer being made of a medium that propagates a transverse wave faster than a speed of a transverse wave propagating on the first dielectric layer;
wherein the first dielectric layer has a convex portion on a top face of the first dielectric layer, the convex portion being provided over the IDT electrode; and
wherein a film thickness of the second dielectric layer is not less than 1.6 times as much as a pitch width of the IDT electrode.
7. An elastic wave device comprising:
a piezoelectric substrate;
an IDT electrode disposed on the piezoelectric substrate;
a first dielectric layer disposed on the piezoelectric substrate, the first dielectric layer covering the IDT electrode and being made of a medium with a frequency-temperature characteristic opposite to that of the piezoelectric substrate; and
a second dielectric layer disposed on the first dielectric layer, the second dielectric layer being made of a medium that propagates a transverse wave faster than a speed of a transverse wave propagating on the first dielectric layer;
wherein the first dielectric layer has a convex portion on a top face of the first dielectric layer, the convex portion being provided over the IDT electrode; and
wherein a relation of
0.6 ≦L 1 /p 1≦1.8 is satisfied,
where p 1 is an electrode finger width of the IDT electrode; and
L 1 is a width at the bottom end of the convex portion.