Device and method for detecting a substance using a thin film resonator (FBAR) having an insulating layer

1. A device for detecting at least one substance of a fluid, comprising a piezoacoustic thin film resonator comprising:

at least one piezoelectric layer,

a first electrode layer arranged on a first side of the piezoelectric layer, the first electrode layer having a side facing away from the piezoelectric layer,

at least one second electrode layer arranged on a second side of the piezoelectric layer, and

an electrical insulating layer arranged on the side of the first electrode layer facing away from the piezoelectric layer, the electrical insulating layer completely covering both the first and second electrode layers such that the fluid is completely prevented from contacting the first and second electrode layers,

at least one adsorption surface for adsorbing the substance of the fluid, the at least one adsorption surface being physically separated from the first electrode layer by the electrical insulating layer,

wherein the piezoelectric layer, the first and second electrode layers and the adsorption surface are designed and arranged relative to one another such that:

an excitation alternating field is coupled into the piezoelectric layer by electrically activating the first and second electrode layers,

the thin film resonator is excited to a resonance oscillation at a resonance frequency f R because of an excitation alternating field coupled into the piezoelectric layer, and

the resonance frequency f R depends on an amount of the substance adsorbed on the adsorption surface.

2. The device according to claim 1 , wherein the insulating layer includes inorganic insulating material.

3. The device according to claim 2 , wherein the inorganic insulating material includes at least one chemical compound selected from the group metal nitride and metal oxide.

4. The device according to claim 3 , wherein the metal oxide is silicon dioxide.

5. The device according to claim 1 , wherein the first electrode layer on which the insulating layer is arranged includes aluminum.

6. The device according to claim 1 , wherein the thin film resonator is arranged on a semiconductor substrate.

7. The device according to claim 6 , wherein the thin film resonator is arranged above a readout circuit integrated in the semiconductor substrate.

8. The device according to claim 1 , wherein the adsorption surface is formed by the insulating layer.

9. The device according to claim 1 , wherein the adsorption surface is formed by a chemically sensitive coating applied to the insulating layer.

10. The device according to claim 9 , wherein the chemically sensitive coating includes gold.

11. The device according to claim 9 , wherein the chemically sensitive coating has a layer thickness in the range from 5 nm to 30 nm.

12. A method for detecting at least one substance of a fluid using a device comprising a piezoacoustic thin film resonator comprising at least one piezoelectric layer, a first electrode layer arranged on a first side of the piezoelectric layer and having a side facing away from the piezoelectric layer, at least one second electrode layer arranged on a second side of the piezoelectric layer, an electrical insulating layer arranged on the side of the first electrode layer facing away from the piezoelectric layer, the electrical insulating layer completely covering both the first and second electrode layers, and at least one adsorption surface for adsorbing the substance of the fluid, the at least one adsorption surface being physically separated from the first electrode layer by the electrical insulating layer, the method comprising the following steps:

bringing the fluid into contact with the adsorption surface such that the substance can be adsorbed on the at least one adsorption surface,

completely preventing the fluid from contacting the first and second electrode layers by the electrical insulating layer,

electrically activating the first and second electrode layers to couple an excitation alternating field into the piezoelectric layer,

wherein the thin film resonator is excited to a resonance oscillation at a resonance frequency of the thin film resonator due to the excitation alternating field coupled into the piezoelectric layer, wherein the resonance frequency of the thin film resonator depends on an amount of the substance adsorbed on the adsorption surface, and

determining the resonance frequency of the thin film resonator.

13. The method according to claim 12 , wherein the insulating layer includes inorganic insulating material including at least one chemical compound selected from the group consisting of metal nitride and silicon dioxide.

14. The method according to claim 12 , wherein the first electrode layer on which the insulating layer is arranged includes aluminum.

15. The method according to claim 12 , wherein the thin film resonator is arranged on a semiconductor substrate.

16. The method according to claim 15 , wherein the thin film resonator is arranged above a read-out circuit integrated in the semiconductor substrate.

17. The method according to claim 12 , wherein the adsorption surface is formed by the insulating layer.

18. The method according to claim 12 , wherein the adsorption surface is formed by a chemically sensitive coating applied to the insulating layer.

19. The method according to claim 18 , wherein the chemically sensitive coating includes gold.

20. The device according to claim 18 , wherein the chemically sensitive coating has a layer thickness in the range from 5 nm to 30 nm.