Radiation-emitting component and method for its manufacture

1. A radiation-emitting component comprising:

a carrier,

a semi-conductor chip arranged on the carrier, wherein the semi-conductor chip has an active layer to generate electromagnetic radiation, and a radiation exit surface,

a first and a second contact structure that electrically contacts the semi-conductor chip,

a first and a second contact layer, wherein the semi-conductor chip is electrically conductively connected to the first contact structure via the first contact layer and to the second contact structure via the second contact layer,

a passivation layer arranged on the semi-conductor chip, wherein the passivation layer comprises an organic polymer, with the general formula (I):

wherein R 1 to R 16 are in each case independent from one another, may be H, CH 3 , F, Cl or Br, and n has a value from 10 to 500,000.

2. The radiation-emitting component according to claim 1 , wherein R 1 , R 2 , R 7 , R 8 , R 9 , R 10 , R 15 and R 16 in each case are H.

3. The radiation-emitting component according to claim 1 , wherein at least sections of the passivation layer comprise the outermost layer of the component.

4. The radiation-emitting component according to claim 1 , wherein the passivation layer is arranged on the radiation exit surface.

5. The radiation-emitting component according to claim 1 , further comprising at least one optical element is arranged on the radiation exit surface of the semi-conductor chip.

6. The radiation-emitting component according to claim 5 , wherein the optical element comprises a conversion layer or a filter.

7. The radiation-emitting component according to claim 5 , wherein the passivation layer is arranged at least on sections of a surface of the optical element facing away from the semi-conductor chip.

8. The radiation-emitting component according to claim 1 , wherein the passivation layer electrically insulates the first contact structure from the second contact structure.

9. The radiation-emitting component according to claim 1 , wherein the passivation layer electrically insulates the second contact layer from the first contact structure.

10. The radiation-emitting component according to claim 1 , wherein the second contact layer is arranged in a frame-shape on the radiation exit surface of the semi-conductor chip.

11. The radiation-emitting component according to claim 1 , wherein the second contact layer has contact webs arranged on the radiation exit surface of the semi-conductor chip.

12. The radiation-emitting component according to claim 1 , wherein, through the carrier, there is a first and a second through-connection, and the first through-connection is electrically conductively connected to the first contact structure and the second through-connection is electrically conductively connected to the second contact structure.

13. The radiation-emitting component according to claim 1 , wherein the component is formed as a thin-film chip.

14. A method for manufacturing a radiation-emitting component comprising:

A) providing a carrier which comprises a first and a second contact structure,

B) mechanically and electrically conductive connecting a semi-conductor chip to the first contact structure via a first contact layer,

C) mechanically and electrically conductive connecting the semi-conductor chip to the second contact structure via a second contact layer,

D) applying a passivation layer on at least sections of the semi-conductor chip,

wherein the passivation layer comprises an organic polymer with the general formula (I):

wherein R 1 to R 16 are in each case independent from one another, may be H, CH 3 , F, Cl or Br, and n has a value from 10 to 500,000.

15. The method according to claim 14 , wherein the passivation layer is applied by a plasma method.

16. The radiation-emitting component according, to claim 6 , wherein the passivation layer is arranged at least on sections of a surface of the optical element facing away from the semi-conductor chip.