Directionally recrystallized graphene growth substrates

1. A method comprising:

forming a metal layer on a substrate;

forming a layer of dielectric material on the metal layer; and

directionally recrystallizing the metal layer to form a recrystallized metal layer suitable for growing a graphene monolayer, wherein the graphene monolayer has a length of about fifteen microns or greater.

2. The method of claim 1 , further comprising:

removing the layer of dielectric material; and

forming the graphene monolayer on the directionally recrystallized metal layer.

3. The method of claim 2 , wherein forming the graphene monolayer on the recrystallized metal layer comprises performing chemical vapor deposition (CVD) using a hydrocarbon gas mixture.

4. The method of claim 1 , wherein directionally recrystallizing the metal layer comprises using a laser to melt at least a portion of the metal layer.

5. The method of claim 1 , further comprising polishing the metal layer before forming the layer of dielectric material on the metal layer.

6. The method of claim 1 , wherein the metal layer comprises one or more of nickel (Ni), ruthenium (Ru) and/or copper (Cu).

7. The method of claim 1 , wherein the metal layer comprises a copper (Cu) layer and wherein the method further comprises:

forming a nickel (Ni) adhesion layer on the substrate; and

forming the copper (Cu) layer on the nickel (Ni) adhesion layer.

8. The method of claim 1 , wherein the layer of dielectric material comprises silicon dioxide (SiO 2 ).

9. The method of claim 1 , wherein the substrate comprises a controlled thermal expansion substrate coated with silicon dioxide (SiO 2 ).

10. The method of claim 9 , wherein the controlled thermal expansion substrate has a thermal expansion coefficient of about 0.5×10 −6 /K or more.

11. A device comprising:

a layer of dielectric material adjacent a substrate; and

a directionally recrystallized metal layer adjacent the layer of dielectric material, wherein the directionally recrystallized metal layer comprises a metal layer suitable for growing a graphene monolayer, wherein the graphene monolayer has a length of about fifteen microns or greater.

12. The device of claim 11 , wherein the graphene monolayer is adjacent the directionally recrystallized metal layer.

13. The device of claim 11 , wherein the directionally recrystallized metal layer comprises a metal layer directionally recrystallized by laser directional solidification.

14. The device of claim 11 , wherein the directionally recrystallized metal layer comprises one or more of nickel (Ni), ruthenium (Ru) and/or copper (Cu).

15. The device of claim 11 , wherein the substrate comprises a controlled thermal expansion substrate coated with silicon dioxide (SiO 2 ).

16. A system comprising:

one or more devices configured to:

form a metal layer on a substrate;

form a dielectric layer on the metal layer; and

directionally recrystallize the metal layer to form a metal layer suitable for growing a graphene monolayer, wherein the graphene monolayer has a length of at least about fifteen microns.

17. The system of claim 16 wherein the one or more devices are further configured to:

remove the dielectric layer; and

form the graphene monolayer on the directionally recrystallized metal layer.

18. The system of claim 16 , wherein the one or more devices are configured to directionally recrystallize the metal layer by applying laser directional solidification to the metal layer.

19. The system of claim 16 , wherein the metal layer comprises one or more of nickel (Ni), ruthenium (Ru) and/or copper (Cu).

20. The system of claim 16 , wherein the substrate comprises a controlled thermal expansion substrate.