Shorts prevention in organic light-emitting diodes
View Patent ↗An organic light emitting diode comprising a first electrode layer, a second electrode layer, a stack of functional layers, including an organic light-emitting layer, sandwiched between said first electrode layer and said second electrode layer, and an passivation layer arranged adjacent to said first electrode layer is disclosed. The passivation layer reacts with the first electrode layer to form an oxide at a reaction temperature that is induced by an evolving short circuit between the first electrode layer and the second electrode layer. The passivation layer is unreactive at temperatures lower than the reaction temperature.
1. An organic light emitting diode, comprising:
a first electrode layer;
a second electrode layer;
a stack of functional layers, comprising an organic light-emitting layer and disposed between said first electrode layer and said second electrode layer; and
a passivation layer arranged adjacent to said first electrode layer, said passivation layer being reactive with said first electrode layer to form a passive material at a reaction temperature induced by an evolving short circuit between said first electrode layer and said second electrode layer, said passivation layer being non-reactive at temperatures lower than said reaction temperature,
wherein said passivation layer comprises at least one clathrate material, which decomposes at said reaction temperature.
2. The organic light emitting diode according to claim 1 , wherein said passive material comprises an oxide and/or an alkoxide.
3. The organic light emitting diode according to claim 1 , wherein said passivation layer has a decomposition temperature below the melting temperature of said first electrode layer, and said passivation layer decomposes at said reaction temperature.
4. The organic light emitting diode according to claim 3 , wherein said passive material comprises an oxide and/or an alkoxide and wherein said oxide and/or said alkoxide is formed by a sequence of the release of a passivating agent from said passivation layer.
5. An organic light emitting diode comprising:
a first electrode layer;
a second electrode layer;
a stack of functional layers, comprising an organic light-emitting layer and disposed between said first electrode layer and said second electrode layer; and
a passivation layer arranged adjacent to said first electrode layer, said passivation layer being reactive with said first electrode layer to form a passive material at a reaction temperature induced by an evolving short circuit between said first electrode layer and said second electrode layer, said passivation layer being non-reactive at temperatures lower than said reaction temperature,
wherein said passive material comprises an oxide and/or an alkoxide and wherein said oxide and/or said alkoxide is formed by a sequence of a release of a passivating agent from said passivation layer,
wherein said passivating agent is selected from the group consisting of: O 2 , H 2 O, CO 2 , MeOH, HCOOH and N 2 O.
6. The organic light emitting diode according to claim 1 , wherein said clathrate material comprises at least one passivating agent selected from the group consisting of: O 2 , H 2 O, CO 2 , MeOH, HCOOH and N 2 O.
7. The organic light emitting diode according to claim 1 , wherein said clathrate material comprises at least one compound selected out of the group consisting of:
quinones and naphtoquinones,
4 -p-Hydroxyphenyl- 2 . 2 . 4 -trimethylchroman,
steroids,
cholic acid, deoxycholic acid and derivatives thereof,
urea, thiourea and N-alkylated and N-arylated derivatives thereof,
Triphenylcarbinols and derivatives thereof, and
Perhydrotriphenylenes and derivatives thereof.
8. An organic light emitting diode, comprising:
a first electrode layer;
a second electrode layer;
a stack of functional layers, comprising an organic light-emitting layer and disposed between said first electrode layer and said second electrode layer; and
a passivation layer arranged adjacent to said first electrode layer, said passivation layer being reactive with said first electrode layer to form a passive material at a reaction temperature induced by an evolving short circuit between said first electrode layer and said second electrode layer, said passivation layer being non-reactive at temperatures lower than said reaction temperature,
wherein said passivation layer comprises an organic and/or inorganic peroxide material.
9. The organic light emitting diode according to claim 8 , wherein said peroxide material is selected from the group consisting of:
alkali and/or earth alkali peroxides and/or zinc peroxide,
alkali percarbonates, periodates, perborates, persulfates, peroxodisulfates, perbromates, perchlorates, and
t-butylperoxide, Di-t-butylperoxide, Benzoylperoxide, Benzoyl-alkyl-peroxides, anthracenperoxide, ascaridol, MCPBA, Trifluorperethanolic acid and mixtures thereof.
10. The organic light emitting diode according to claim 1 , wherein said first electrode layer comprises a low work-function metal in combination with a protective metal layer.
11. The organic light emitting diode according to claim 1 , wherein said second electrode layer comprises indium tin oxide (ITO).
12. A display device comprising an organic light emitting diode according to claim 1 .
13. A light source comprising an organic light emitting diode according to claim 1 .
14. The organic light emitting diode according to claim 1 , wherein said passive material is formed through a solid state reaction with said first electrode at said reaction temperature.