Semiconductor device
View Patent ↗A memory cell changes a potential of a bit line to a discharge potential from a precharge potential in correspondence with held data. A sense amplifier precharges a bit line by a precharge circuit, compares potential at a decision point linked with the potential of the bit line with a decision threshold and outputs a comparison result by an output circuit, and sets the potential at the decision point at a time of precharging in correspondence with the decision threshold. A capacitor element connects between the bit line and an input end of the output circuit. A potential setting circuit enables setting of an input end of the output circuit forming a decision point, to a prescribed potential between a precharge voltage of the bit line and the decision threshold at a time of precharging the bit line. Operating range of memory function is enlarged.
1. A semiconductor device, comprising:
a memory cell;
a first line coupled to the memory cell;
a first terminal electrically coupled to the first line;
a second terminal; and
a sense amplifier circuit including first and second transistors, gates of the first and second transistors being coupled in common to the first terminal, one of a source and a drain of the first transistor and one of a source and a drain of the second transistor being coupled in common to the second terminal,
the first terminal being configured to be supplied with a precharge potential, a level of the precharge potential being determined based on both first and second levels, the first level being related to a first threshold voltage of the first transistor, and the second level being related to a second threshold voltage of the second transistor.
2. The semiconductor device as claimed in claim 1 , wherein a potential of the second terminal is pulled up by the first transistor when a potential of the first terminal is lower than a sense threshold potential and pulled down by the second transistor when the potential of the first terminal is greater than the sense threshold potential, the precharge potential being greater than the sense threshold potential.
3. The semiconductor device as claimed in claim 1 , wherein the first and second transistors are different in conductivity type from each other.
4. The semiconductor device as claimed in claim 2 , wherein the potential of the first terminal changes from the precharge potential to a potential lower than the sense threshold potential when the memory cell takes a first state.
5. The semiconductor device as claimed in claim 4 , wherein the potential of the first terminal does not change from the precharge potential to the potential lower than the sense threshold potential when the memory cell takes a second state.
6. The semiconductor device as claimed in claim 5 , wherein the potential of the first terminal substantially maintains the precharge potential when the memory cell takes the second state.
7. The semiconductor device as claimed in claim 5 , wherein the memory cell comprises a phase change material, the first state corresponding to a crystalline state of the phase change material, and the second state corresponding to an amorphous state of the phase change material.
8. The semiconductor device as claimed in claim 1 , further comprising third and fourth terminals and a precharge potential generator generating the precharge potential, the precharge potential generator including third and fourth transistors, gates of the third and fourth transistors being coupled in common to the third terminal, ones of a source and a drain of the third and fourth transistors being coupled in common to the fourth terminal, and the third and fourth terminals being coupled to each other.
9. The semiconductor device as claimed in claim 8 , wherein a third threshold voltage of the third transistor is substantially equal to the first threshold voltage and a fourth threshold voltage of the fourth transistor is substantially equal to the second threshold voltage.
10. The semiconductor device as claimed in claim 8 , wherein a first ratio of a size of the third transistor to a size of the fourth transistor is different from a second ratio of a size of the first transistor to a size of the second transistor.
11. The semiconductor device as claimed in claim 10 , wherein the first ratio is greater than the second ratio.
12. The semiconductor device as claimed in claim 1 , further comprising a capacitor, one node of the capacitor being coupled to the first line and an other node of the capacitor being coupled to the first terminal.
13. The semiconductor device as claimed in claim 12 , further comprising a fifth transistor coupled between the first and third terminals.
14. The semiconductor device as claimed in claim 13 , further comprising a sixth transistor coupled between the first line and a voltage terminal, a potential of the voltage terminal being greater than the precharge potential.
15. The semiconductor device as claimed in claim 1 , further comprising a seventh transistor coupled between the first and second terminals, the first and second transistors being configured to generate the precharge potential at the second terminal when the seventh transistor turns on, and the first terminal being configured to be supplied with the precharge potential from the second terminal when the seventh transistor turns on.
16. The semiconductor device as claimed in claim 15 , further comprising first and second voltage terminals and an eighth transistor, the first transistor being coupled between the first voltage terminal and the second terminal, the second transistor coupled between the second voltage terminal and the second terminal, and the eighth transistor being coupled between the second voltage terminal and the second terminal in parallel to the second transistor.
17. The semiconductor device as claimed in claim 16 , wherein the first terminal is configured to be supplied with the precharge potential when the eighth transistor is in an off-state.
18. The semiconductor device as claimed in claim 17 , further comprising a capacitor, one node of the capacitor being coupled to the first line and an other node of the capacitor being coupled to the first terminal.
19. The semiconductor device as claimed in claim 18 , further comprising a ninth transistor coupled between the first line and the first voltage terminal, a potential of the first voltage terminal being greater than the precharge potential.
20. The semiconductor device as claimed in claim 19 , wherein gates of the eighth and ninth transistors are coupled in common to each other.