Semiconductor device and test method thereof

1. A semiconductor device comprising:

a plurality of data input/output terminals each of which is used to output read data to outside and input write data from outside;

a plurality of data output circuits each of which outputs the read data to an associated one of the data input/output terminals;

a plurality of data input circuits each of which takes in the write data supplied from an associated one of the data input/output terminals synchronously with a strobe signal;

a strobe terminal to which the strobe signal is supplied from outside;

a signal input terminal to which a signal is supplied from outside, the signal input terminal being different from the data input/output terminals, the strobe terminal, and a terminal that controls the data input/output terminals; and

a control circuit having a first operation mode and a second operation mode, wherein

in the first operation mode, the control circuit activates all the data output circuits to output the read data in parallel to the data input/output terminals or the control circuit activates all the data input circuits to take in the write data supplied in parallel from the data input/output terminals synchronously with the strobe signal, and

in the second operation mode, the control circuit selectively activates one of the data output circuits based on the signal supplied to the signal input terminal to output the read data to an associated one of the data input/output terminals and inactivates the other of the data output circuits, or the control circuit activates all the data input circuits to take in the write data supplied in parallel from the data input/output terminals synchronously with the signal supplied to the signal input terminal instead of the strobe signal.

2. The semiconductor device as claimed in claim 1 , wherein

the control circuit includes a selection circuit that selects one of an output signal of a DQS circuit that is connected to the strobe terminal and an output signal of a signal input circuit that is connected to the signal input terminal, the control circuit supplying a selected one of the output signals to the data input circuits, and

the selection circuit selects the output signal of the DQS circuit in the first operation mode, and selects the output signal of the signal input circuit in the second operation mode.

3. The semiconductor device as claimed in claim 1 , wherein

the control circuit includes a decoder that decodes a binary signal supplied via a signal input circuit that is connected to the signal input terminal, and

the control circuit selects one of the data output circuits based on an output signal of the decoder in the second operation mode.

4. The semiconductor device as claimed in claim 1 , wherein, in the second operation mode, the control circuit controls an output node of selected one of the data output circuits to a low impedance state based on the signal supplied to the signal input terminal, and controls output nodes of the other of the data output circuits to a high impedance state.

5. The semiconductor device as claimed in claim 1 , wherein, the control circuit controls output nodes of all the data output circuits to a low impedance state in the first operation mode.

6. The semiconductor device as claimed in claim 1 , wherein, the signal input terminal is supplied with an address signal or a command signal in the first operation mode.

7. The semiconductor device as claimed in claim 1 , wherein, the data input/output terminals and the strobe terminal are electrically connected in common via a test probe of outside in the second operation mode.

8. A test method of a semiconductor device using a tester, the method comprising:

electrically connecting a plurality of first test probes of the tester that are electrically connected in common, respectively to a plurality of data input/output terminals and a strobe terminal of the semiconductor device, the strobe terminal inputting and outputting a strobe signal for defining output timing of read data from the data input/output terminals and defining input timing of write data into the data input/output terminals;

electrically connecting at least one second test probe of the tester to at least one signal input terminal of the semiconductor device that is not related to control of the data input/output terminals;

supplying at least one signal to the at least one signal input terminal via the at least one second test probe;

selectively outputting the read data from one of the data input/output terminals based on the at least one signal and not outputting the read data from remaining ones of the data input/output terminals in a test mode and in a read mode;

taking in the write data that is supplied in common to the data input/output terminals, synchronously with the at least one signal without using the strobe terminal in the test mode and in the write mode;

receiving the read data from the first test probes in the read mode; and

supplying the write data in common to the data input/output terminals in the write mode.

9. The test method as claimed in claim 8 , wherein, in the test mode and in the read mode,

the semiconductor device selects one of a plurality of data output circuits each connected to an associated one of the data input/output terminals based on the at least one signal and does not select remaining ones of the data output circuit, and

the semiconductor device outputs the read data from selected one of the data output circuits to the tester, via an associated one of the data input/output terminals and via an associated one of the first test probes.

10. The test method as claimed in claim 8 , wherein, in the test mode and in the write mode, the semiconductor device takes the write data into a plurality of data input circuits each connected to an associated one of the data input/output terminals synchronously with the at least one signal.

11. The test method as claimed in claim 8 , wherein

the tester brings the semiconductor device into the test mode via another test probe,

the tester issues a read command to bring the semiconductor device into the read mode, and

the tester issues a write command to bring the semiconductor device into the write mode.

12. A test method of a semiconductor device using a tester, the method comprising:

electrically connecting a plurality of first test probes of the tester that are electrically connected in common, respectively to a plurality of data input/output terminals of the semiconductor device;

electrically connecting at least one second test probe of the tester to at least one signal input terminal of the semiconductor device that is not related to control of the data input/output terminals;

supplying at least one selection signal to the at least one signal input terminal via the at least one second test probe;

selecting one of a plurality of data output circuits each connected to an associated one of the data input/output terminals based on the at least one selection signal so as to be able to output read data therefrom, and not selecting remaining ones of the data output circuits; and

receiving the read data output from selected one of the data output circuits via an associated one of the data input/output terminals and via an associated one of the first test probes.

13. The test method as claimed in claim 12 , further comprising:

electrically connecting one of the first test probes to a strobe terminal of the semiconductor device, the strobe terminal inputting and outputting a strobe signal for defining output timing of the read data from the data input/output terminals and defining input timing of write data into the data input/output terminals;

supplying the write data in common to the data input/output terminals via the first test probes;

supplying a test strobe signal to the at least one signal input terminal via the at least one second test probe; and

taking the write data that is supplied in common to the data input/output terminals into a plurality of data input circuits each connected to an associated one of the data input/output terminals, synchronously with the test strobe signal.

14. The test method as claimed in claim 12 , wherein the test method is carried out on a wafer state on which a plurality of the semiconductor devices are formed.

15. The test method as claimed in claim 14 , wherein the test method is carried out in parallel to more than one semiconductor device of the plurality of the semiconductor devices.

16. The semiconductor device as claimed in claim 2 , wherein

the control circuit includes a decoder that decodes a binary signal supplied via a signal input circuit that is connected to the signal input terminal, and

the control circuit selects one of the data output circuits based on an output signal of the decoder in the second operation mode.

17. The semiconductor device as claimed in claim 2 , wherein, in the second operation mode, the control circuit controls an output node of selected one of the data output circuits to a low impedance state based on the signal supplied to the signal input terminal, and controls output nodes of the other of the data output circuits to a high impedance state.

18. The semiconductor device as claimed in claim 17 , wherein, the signal input terminal is supplied with an address signal or a command signal in the first operation mode.

19. The semiconductor device as claimed in claim 2 , wherein, the signal input terminal is supplied with an address signal or a command signal in the first operation mode.