Organic light-emitting display apparatus and method of manufacturing the same
View Patent ↗An organic light-emitting display apparatus includes a light-shielding layer formed on a pixel defining layer to prevent external light or internal light from entering an active layer of a thin-film transistor (TFT), thus improving the stability of the active layer, and a method of manufacturing the organic light-emitting display apparatus.
1. An organic light-emitting display apparatus, comprising:
a substrate;
a first electrode and a gate electrode on the substrate, the first electrode and the gate electrode being on a same plane;
an active layer insulated from the gate electrode;
a source electrode and a drain electrode which are insulated from the gate electrode and contact the active layer;
an insulating layer interposed between the source and drain electrodes and the active layer;
a pixel defining layer (PDL) on the insulating layer, the PDL covering the source electrode and the drain electrode and including an opening that exposes the first electrode; and
a light-shielding layer covering the PDL to shield light incident to the active layer, wherein
an organic light-emitting diode (OLED) is electrically connected with one of the source electrode and the drain electrode.
2. The organic light-emitting display apparatus as claimed in claim 1 , wherein the light-shielding layer shields light having a wavelength of 400-450 nm.
3. The organic light-emitting display apparatus as claimed in claim 1 , wherein the light-shielding layer shields blue light.
4. The organic light-emitting display apparatus as claimed in claim 1 , wherein the PDL includes a photosensitive high polymer.
5. The organic light-emitting display apparatus as claimed in claim 4 , wherein the PDL includes at least one of a photo sensitive polyimide (PSPI), a photo sensitive acryl (PA), and a photo sensitive novolac resin.
6. The organic light-emitting display apparatus as claimed in claim 4 , wherein the light-shielding layer is formed by oxidizing the surface of the PDL.
7. The organic light-emitting display apparatus as claimed in claim 6 , wherein the light-shielding layer is formed by thermally processing the PDL at a temperature of approximately 230-250° C. in an atmospheric pressure state.
8. The organic light-emitting display apparatus as claimed in claim 1 , wherein the PDL includes a photosensitive high polymer, the light-shielding layer being an oxidized surface of the PDL, the oxidized surface of the PDL extending along a sidewall of the opening that exposes the first electrode such that the light-shielding layer prevents light emitted from the OLED from entering the active layer.
9. The organic light-emitting display apparatus as claimed in claim 1 , wherein the active layer includes an oxide semiconductor.
10. The organic light-emitting display apparatus as claimed in claim 1 , wherein light emitted from the OLED is irradiated toward the substrate.
11. A method of manufacturing an organic light-emitting display apparatus, the method comprising:
forming a gate electrode and a first electrode on a substrate, the first electrode and the gate electrode being on a same plane;
forming a gate insulating layer covering the gate electrode on the substrate;
forming an active layer on the gate insulating layer;
forming an insulating layer covering at least a channel region of the active layer;
forming a source electrode and a drain electrode that are insulated from the gate electrode and that contact the active layer;
forming a pixel defining layer (PDL) covering the source electrode and the drain electrode, the PDL including an opening that exposes the first electrode;
forming a light-shielding layer shielding light incident to the active layer, on the PDL, the light-shielding layer covering the PDL; wherein
an organic light-emitting diode (OLED) is electrically connected with one of the source electrode and the drain electrode.
12. The method as claimed in claim 11 , wherein the light shielding layer shields light having a wavelength of 400-450 nm.
13. The method as claimed in claim 11 , wherein the light-shielding layer shields blue light.
14. The method as claimed in claim 11 , wherein the PDL includes a photosensitive high polymer.
15. The method as claimed in claim 14 , wherein the light-shielding layer is formed by oxidizing the surface of the PDL.
16. The method as claimed in claim 15 , wherein the light-shielding layer is formed by thermally processing the PDL at a temperature of approximately 230-250° C. in an atmospheric pressure state.
17. The method as claimed in claim 11 , wherein the PDL includes at least one of a photo sensitive polyimide (PSPI), a photo sensitive acryl (PA), and a photo sensitive novolac resin.
18. The method as claimed in claim 11 , wherein the PDL includes a photosensitive high polymer, the light-shielding layer being formed by oxidizing a surface of the PDL, the oxidized surface of the PDL being formed to extend along a sidewall of the opening that exposes the first electrode such that the light-shielding layer prevents light emitted from the OLED from entering the active layer.
19. The method as claimed in claim 11 , wherein the active layer includes an oxide semiconductor.
20. The method as claimed in claim 11 , wherein light emitted from the OLED is irradiated toward the substrate.