Optoelectronic semiconductor chip and method for producing an optoelectronic semiconductor chip

1. An optoelectronic semiconductor chip comprising:

a semiconductor layer sequence comprising

at least one active layer configured to generate an electromagnetic radiation; and

coupling-out structures that are applied directly on a radiation passage area of the semiconductor layer sequence and have at least one continuous, layer-like region in which a plurality of openings are formed that completely penetrate through the layer-like region in a direction toward the radiation passage area,

wherein:

a material of the coupling-out structures is different than a material of the semiconductor layer sequence,

refractive indices of respective materials of the coupling-out structures and of the semiconductor layer sequence deviate from one another by at most 30%, and

facets of the coupling-out structures have a total area amounting to at least 5% of an area content of the radiation passage area, and

the facets of the coupling-out structures are at least partly formed by the openings,

wherein the radiation passage area is planar,

wherein the semiconductor layer sequence comprises at least one of GaN, InGaN, AlGaN and AlInGaN, and

wherein the coupling-out structures comprise at least one of TiO 2 , ZnS, AlN, SiC, BN, Ta 2 O 5 .

2. An optoelectronic semiconductor chip comprising:

a semiconductor layer sequence comprising:

at least one active layer configured to generate an electromagnetic radiation;

at least one conductive layer is applied in places on a radiation passage area of the semiconductor layer sequence, wherein the conductive layer is a transparent conductive oxide, a thickness of the conductive layer in a direction perpendicular to the radiation passage area is 250 nm or less;

coupling-out structures that completely penetrate through the at least one conductive layer, which are applied at least indirectly on the radiation passage area of the semiconductor layer sequence, wherein a height of the coupling out structures is between 0.3 μm and 10 μm inclusive in a direction perpendicular to the radiation passage area; and

islands formed by a material of the coupling-out structures, wherein adjacent islands are separated from one another,

wherein:

the material of the coupling-out structures is different than a material of the semiconductor layer sequence,

refractive indices of the materials of the coupling-out structures and of the semiconductor layer sequence deviate from one another by at most 30%, and

facets of the coupling-out structures have a total area amounting to at least 5% of an area content of the radiation passage area,

wherein the thickness of the conductive layer is smaller than the height of the coupling out structures.

3. The optoelectronic semiconductor chip according to claim 2 , wherein the facets are those boundary areas or parts of the boundary areas of the coupling-out structures which form an angle of at least 15° and of at most 75° with the radiation passage area.

4. The optoelectronic semiconductor chip according to claim 2 , wherein the coupling-out structures have a lateral extent of between 0.2 μm and 10 μm inclusive in a direction parallel to the radiation passage area.

5. The optoelectronic semiconductor chip according to claim 2 , wherein the coupling-out structures are fashioned in truncated-pyramid-like fashion, in sphere-segment-like fashion, in dome-like fashion and/or in truncated-cone-like fashion, wherein a base area of the coupling-out structures faces the radiation passage area.

6. The optoelectronic semiconductor chip according to claim 2 , wherein the material of the coupling-out structures is transparent and dielectric.

7. The optoelectronic semiconductor chip according to claim 2 , wherein the material of the coupling-out structures contains or consists of one of the following substances: TiO 2 , ZnS, AlN, SiC, BN, Ta 2 O 5 .

8. The optoelectronic semiconductor chip according to claim 2 , wherein the total area of the facets of the coupling-out structures amounts to at least 20% of the area content of the radiation passage area.

9. The optoelectronic semiconductor chip according to claim 2 , wherein the material of the coupling-out structures has a refractive index of between 2.4 and 2.6 inclusive.

10. The optoelectronic semiconductor chip according to claim 2 , wherein

the material of the semiconductor layer sequence is based on GaN, InGaN, AlGaN and/or AlInGaN,

the angle (α) between the radiation passage area and the facets of the coupling-out structures is between 30° and 60° inclusive, and

the coupling-out structures are shaped in truncated-cone-like fashion and consist of TiO 2 .

11. A method for producing an optoelectronic semiconductor chip comprising:

growing a semiconductor layer sequence comprising at least one active layer on a substrate;

applying and patterning a light-sensitive material at a radiation passage area of the semiconductor layer sequence;

removing the light-sensitive material in partial regions;

producing coupling-out structures at least indirectly at the radiation passage area in the partial regions, a height of the coupling out structures is between 0.3 μm and 10 μm inclusive in a direction perpendicular to the radiation passage area;

removing the remaining light-sensitive material, wherein a material of the coupling-out structures is different than a material of the semiconductor layer sequence and the materials differ from one another in terms of the refractive index by at most 30%, and wherein a total area of facets of the coupling-out structures amounts to at least 30% of an area content of the radiation passage area;

forming islands with a material of the coupling-out structures, wherein adjacent islands are separated from one another; and

applying at least one conductive layer in places on the radiation passage area of the semiconductor layer sequence having a thickness in a direction perpendicular to the radiation passage area of 250 nm or less, wherein the at least one conductive layer is a transparent conductive oxide,

wherein the coupling-out structures completely penetrate through the at least one conductive layer,

wherein the thickness of the conductive layer is smaller than the height of the coupling out structures.

12. The method according to claim 11 , wherein, prior to applying and patterning the light-sensitive material, a conductive layer is produced at least in places between said material and the radiation passage area, and wherein, with the removal of the light-sensitive material in the partial regions, the conductive layer is partly or completely removed in said partial regions.

13. The optoelectronic semiconductor chip according to claim 2 , wherein

the islands project above the at least one conductive layer in a direction away from the radiation passage area and

a side of the conductive layer that is remote from the radiation passage area is free of the coupling out structures.

14. The optoelectronic semiconductor chip according to claim 2 ,

wherein the radiation passage area is completely covered by the conductive layer and the coupling-out structures,

wherein the conductive layer and the coupling-out structures are in direct contact with the semiconductor layer sequence,

wherein a surface of the conductive layer remote from the semiconductor layer sequence and the radiation passage area are smooth, and

the conductive layer comprises at least one of indium tin oxide, indium zinc oxide, or zinc oxide.