Semiconductor materials prepared from dithienylvinylene copolymers
View Patent ↗Disclosed are new semiconductor materials prepared from dithienylvinylene copolymers with aromatic or heteroaromatic π-conjugated systems. Such copolymers, with little or no post-deposition heat treatment, can exhibit high charge carrier mobility and/or good current modulation characteristics. In addition, the polymers of the present teachings can possess certain processing advantages such as improved solution-processability and low annealing temperature.
1. A polymer of the formula I:
or of the formula I′:
wherein:
pi-2 is selected from the group consisting of repeating units of the formula
R 1 , R 2 , R 3 , R 4 are selected from the group consisting of H, halogen, CN, a C 1- 30 alkyl group, a C 2-30 alkenyl group, a C 1-20 alkoxy group and a C 1-20 alkylthio group;
R 15 and R 16 are selected from the group consisting of H, halogen, CN, a C 1-30 alkyl group, a C 2-30 alkenyl group, a C 1-20 alkoxy group and a C 1-20 alkylthio group;
y′ represents 1; and
n represents an integer greater than 1.
2. The polymer according to claim 1 , wherein pi-2 is
3. The polymer according to claim 1 , wherein n is an integer between 2 and 5000.
4. A composition, comprising one or more polymers of claim 1 , dissolved or dispersed in a liquid medium.
5. The composition of claim 4 , wherein the liquid medium comprises water or an organic solvent.
6. The composition of claim 4 , the composition further comprising one or more additives.
7. The composition of claim 6 , wherein the one or more additives are independently selected from the group consisting of a viscosity modulator, a detergent, a dispersant, a binding agent, a compatibilizing agent, a curing agent, an initiator, a humectant, an antifoaming agent, a wetting agent, a pH modifier, a biocide and a bactereriostat.
8. A thin film semiconductor, comprising one or more polymers of claim 1 .
9. A composite, comprising a substrate and the thin film semiconductor of claim 8 .
10. A field effect transistor device, comprising the thin film semiconductor of claim 8 .
11. A photovoltaic device, comprising the thin film semiconductor of claim 8 .
12. An organic light emitting device, comprising the thin film semiconductor of claim 8 .
13. A field effect transistor device, comprising the composite of claim 9 .
14. A photovoltaic device, comprising the composite of claim 9 .
15. An organic light emitting device, comprising the composite of claim 9 .