Light emitting device
View Patent ↗A light emitting device includes a substrate, and an LED chip mounted on the substrate. The chip includes: a body comprising a transparent conductor which comprises a base and sticks out of the base to taper off from the base; a light source comprising light emitting parts separately formed on the base; a first terminal formed on the base; and second terminals formed on the light emitting parts, respectively. A conductive pattern of the substrate includes: a first conductor electrically connected with the first terminal; and second conductors electrically connected with the second terminals, respectively.
1. A light emitting device, comprising:
a substrate formed with a conductive pattern on a surface of the substrate; and
an LED chip mounted on the surface of the substrate to be electrically connected with the conductive pattern,
wherein the LED chip comprises:
a body comprising a transparent conductor, the transparent conductor comprising a base and sticking out of the base to taper off from the base;
a light source comprising a plurality of light emitting parts, the light emitting parts being separately formed on the base;
a first terminal formed on the base; and
a plurality of second terminals, the second terminals being formed on the light emitting parts, respectively,
wherein the conductive pattern comprises:
a first conductor which is electrically connected with the first terminal; and
a plurality of second conductors, the second conductors being electrically connected with the second terminals, respectively.
2. The light emitting device of claim 1 ,
wherein the transparent conductor further comprises one apex and tapers off to the apex from the base;
wherein the light emitting parts are arranged around the center of the base.
3. The light emitting device of claim 2 ,
wherein the transparent conductor is n-type ZnO and has hexagonal crystal structure, the transparent conductor being in the shape of a hexagonal pyramid having said base in the shape of a regular hexagon,
wherein the light emitting parts are located one by one in segmented regions divided by different line segments between the center and outer circumference of the base.
4. The light emitting device of claim 3 , wherein the light emitting parts are located one by one in six segmented regions divided by six line segments between the center and each vertex of the base.
5. The light emitting device of claim 3 , wherein the light emitting parts are located one by one in four segmented regions divided by one diagonal line and two apothems of the base, the two apothems being perpendicular to the diagonal line.
6. The light emitting device of claim 1 ,
wherein each of the light emitting parts comprises: a light emitting layer; and p-type and n-type nitride semiconductor layers placed at both sides of the light emitting layer,
wherein the p-type nitride semiconductor layers of the light emitting parts are located between the light emitting layers of the light emitting parts and the base, respectively,
wherein the first terminal comprises one anode electrode, while each of the second terminals comprises at least one cathode electrode.
7. The light emitting device of claim 6 , wherein the anode electrode is located on the central part of the base.
8. The light emitting device of claim 7 , wherein the anode electrode has a plurality of auxiliary electrodes, each of the auxiliary electrodes being arranged at a clearance between adjacent light emitting parts.
9. The light emitting device of claim 2 ,
wherein each of the light emitting parts comprises: a light emitting layer; and p-type and n-type nitride semiconductor layers placed at both sides of the light emitting layer,
wherein the p-type nitride semiconductor layers of the light emitting parts are located between the light emitting layers of the light emitting parts and the base, respectively,
wherein the first terminal comprises one anode electrode, while each of the second terminals comprises at least one cathode electrode.
10. The light emitting device of claim 3 ,
wherein each of the light emitting parts comprises: a light emitting layer; and p-type and n-type nitride semiconductor layers placed at both sides of the light emitting layer,
wherein the p-type nitride semiconductor layers of the light emitting parts are located between the light emitting layers of the light emitting parts and the base, respectively,
wherein the first terminal comprises one anode electrode, while each of the second terminals comprises at least one cathode electrode.
11. The light emitting device of claim 4 ,
wherein each of the light emitting parts comprises: a light emitting layer; and p-type and n-type nitride semiconductor layers placed at both sides of the light emitting layer,
wherein the p-type nitride semiconductor layers of the light emitting parts are located between the light emitting layers of the light emitting parts and the base, respectively,
wherein the first terminal comprises one anode electrode, while each of the second terminals comprises at least one cathode electrode.
12. The light emitting device of claim 5 ,
wherein each of the light emitting parts comprises: a light emitting layer; and p-type and n-type nitride semiconductor layers placed at both sides of the light emitting layer,
wherein the p-type nitride semiconductor layers of the light emitting parts are located between the light emitting layers of the light emitting parts and the base, respectively,
wherein the first terminal comprises one anode electrode, while each of the second terminals comprises at least one cathode electrode.
13. The light emitting device of claim 9 , wherein the anode electrode is located on the central part of the base.
14. The light emitting device of claim 10 , wherein the anode electrode is located on the central part of the base.
15. The light emitting device of claim 11 , wherein the anode electrode is located on the central part of the base.
16. The light emitting device of claim 12 , wherein the anode electrode is located on the central part of the base.
17. The light emitting device of claim 13 , wherein the anode electrode has a plurality of auxiliary electrodes, each of the auxiliary electrodes being arranged at a clearance between adjacent light emitting parts.
18. The light emitting device of claim 14 , wherein the anode electrode has a plurality of auxiliary electrodes, each of the auxiliary electrodes being arranged at a clearance between adjacent light emitting parts.
19. The light emitting device of claim 15 , wherein the anode electrode has a plurality of auxiliary electrodes, each of the auxiliary electrodes being arranged at a clearance between adjacent light emitting parts.
20. The light emitting device of claim 16 , wherein the anode electrode has a plurality of auxiliary electrodes, each of the auxiliary electrodes being arranged at a clearance between adjacent light emitting parts.