Germanium complexes with amidine derivative ligand and process for preparing the same
View Patent ↗Provided is a germanium complex represented by Chemical Formula 1 wherein Y1 and Y2 are independently selected from R3, NR4R5 or OR6, and R1 through R6 independently represent (Ci-C7) alkyl. The provided germanium complex with an amidine derivative ligand is thermally stable, is highly volatile, and does not include halogen components. Therefore, it may be usefully used as a precursor to produce high-quality germanium thin film or germanium-containing compound thin film by metal organic chemical vapor deposition (MOCVD) or atomic layer deposition (ALD).
1. A germanium complex represented by Chemical Formula 1:
wherein Y 1 and Y 2 are independently selected from R 3 , NR 4 R 5 or OR 6 , and R 1 through R 6 independently represent (C 1 -C 7 )alkyl.
2. The germanium complex according to claim 1 , wherein Y 1 and Y 2 independently represent —N(CH 3 ) 2 , —N(CH 3 )(CH 2 CH 3 ), —CH 3 or —C(CH 3 ) 3 .
3. The germanium complex according to claim 2 , which is selected from the following structures:
.
4. A method for preparing a germanium thin film, comprising:
injecting the germanium complex according to claim 3 to a substrate provided in a reactor to prepare a germanium thin film by chemical vapor deposition or atomic layer deposition.
5. A method for preparing a germanium thin film, comprising:
injecting the germanium complex according to claim 2 to a substrate provided in a reactor to prepare a germanium thin film by chemical vapor deposition or atomic layer deposition.
6. The germanium complex according to claim 1 , wherein R 1 through R 2 independently represent methyl, ethyl, propyl or t-butyl.
7. A method for preparing a germanium thin film, comprising:
injecting the germanium complex according to claim 6 to a substrate provided in a reactor to prepare a germanium thin film by chemical vapor deposition or atomic layer deposition.
8. A method for preparing a germanium thin film, comprising:
injecting the germanium complex according to claim 1 to a substrate provided in a reactor to prepare a germanium thin film by chemical vapor deposition or atomic layer deposition.
9. The method for preparing a germanium thin film according to claim 8 , wherein the temperature of the substrate is from 150 to 350° C.
10. A method for preparing a germanium complex, comprising:
reacting an alkali metal salt represented by Chemical Formula 3 with an alkylcarbodiimide (R 1 NCNR 2 ) compound represented by Chemical Formula 4 to prepare a complex represented by Chemical Formula 5; and
adding to the complex represented by Chemical Formula 5 a germanium(II) halide and an alkali metal salt represented by Chemical Formula 6 to prepare a germanium complex represented by Chemical Formula 1:
wherein M 1 and M 2 independently represent an alkali metal, Y 1 and Y 2 are independently selected from R 3 , NR 4 R 5 or OR 6 , and R 1 through R 6 independently represent (C 1 -C 7 )alkyl.
11. The method for preparing a germanium complex according to claim 10 , wherein Y 1 and Y 2 independently represent —N(CH 3 ) 2 , —N(CH 3 )(CH 2 CH 3 ), —CH 3 or —C(CH 3 ) 3 , and M 1 and M 2 independently represent lithium, sodium or potassium.
12. The method for preparing a germanium complex according to claim 10 , or wherein the alkylcarbodiimide is 1,3-diisopropylcarbodiimide.
13. The method for preparing a germanium complex according to claim 10 , wherein the germanium complex represented by Chemical Formula 1 or Chemical Formula 7 is selected from the following structures:
.
14. The method for preparing a germanium complex according to claim 10 , wherein the germanium(II) halide is Ge(II)Br 2 , Ge(II)Cl 2 (dioxane) or Ge(II)I 2 .
15. A method for preparing a germanium complex, comprising:
reacting an alkali metal salt represented by Chemical Formula 3 with an alkylcarbodiimide (R 1 NCNR 2 ) compound represented by Chemical Formula 4 to prepare a complex represented by Chemical Formula 5; and
adding to the complex represented by Chemical Formula 5 a germanium(II) halide to prepare a germanium complex represented by Chemical Formula 7:
wherein M 1 represents an alkali metal, Y 1 is selected from R 3 , NR 4 R 5 or OR 6 , and R 1 through R 6 independently represent (C 1 -C 7 )alkyl.
16. The method for preparing a germanium complex according to claim 15 , wherein Y 1 represents —N(CH 3 ) 2 , —N(CH 3 )(CH 2 CH 3 ), —CH 3 or —C(CH 3 ) 3 , and M 1 represents lithium, sodium or potassium.
17. The method for preparing a germanium complex according to claim 15 , wherein the alkylcarbodiimide is 1,3-diisopropylcarbodiimide.
18. The method for preparing a germanium complex according to claim 15 , wherein the germanium complex represented by Chemical Formula 1 or Chemical Formula 7 is selected from the following structures:
.
19. The method for preparing a germanium complex according to claim 15 , wherein the germanium(II) halide is Ge(II)Br 2 , Ge(II)Cl 2 (dioxane) or Ge(II)I 2 .