Optoelectronic semiconductor component

1. An optoelectronic semiconductor device comprising:

a multiplicity of radiation-emitting semiconductor chips, arranged in particular in a matrix-like manner, wherein the semiconductor chips are applied on a common carrier and wherein the semiconductor chips each have a radiation exit area facing away from the carrier element;

at multiplicity of converter elements disposed downstream of the semiconductor chip for converting electromagnetic radiation emitted by the semiconductor chips; and

precisely scattering element situated downstream of the semiconductor chip and serving for diffusely scattering electromagnetic radiation emitted by the semiconductor chips,

wherein the scattering element covers all the semiconductor chips and has a continuous radiation exit area,

wherein the scattering element is in direct contact with the converter elements and neither a gap nor an interspace is formed at the interface between the converter elements and the scattering element,

and wherein the converter elements and the scattering element form a composite assembly, which is applied to the corresponding semiconductor chips by means of adhesive bonding, so that each converter element is assigned uniquely to one semiconductor chip,

wherein each converter element covers solely the radiation exit area of the corresponding semiconductor chip, so that the converter element does not cover side areas of the corresponding semiconductor chip, wherein the side areas extend transversely to the radiation exit area.

2. The optoelectronic semiconductor device according to claim 1 , wherein the lateral distance between adjacent semiconductor chips is between 10 and 150 μm.

3. The optoelectronic semiconductor device according to claim 1 , wherein the scattering element is formed with a matrix material into which radiation-scattering particles are introduced.

4. The optoelectronic semiconductor device according to claim 3 , wherein at least one radiation-scattering particle comprises at least one of the following materials or contains one of the following materials: SiO 2 , ZrO 2 , TiO 2 , or Al x O y .

5. The optoelectronic semiconductor device according to claim 3 , wherein the concentration of the radiation-scattering particles in the matrix material is greater than 1% by weight.

6. The optoelectronic semiconductor device according to claim 1 , wherein the scattering element is formed with a matrix material into which microstructures are introduced.

7. The optoelectronic semiconductor device according to claim 1 , wherein the scattering element is a light-scattering film or a light-scattering plate.

8. The optoelectronic semiconductor device according to claim 1 , wherein the precisely one scattering element covers all exposed outer areas of the converter element, which are not covered by the semiconductor chip.

9. The optoelectronic semiconductor device according to claim 1 , wherein the scattering element is self-supporting.

10. The optoelectronic semiconductor device according to claim 1 ,

wherein the converter elements laterally do not project beyond the corresponding semiconductor chips,

wherein the distance between adjacent semiconductor chips is between 10 pm and 150 μm, and

wherein the gap between adjacent semiconductor chips is not filled with a solid or liquid material, mechanically supporting the scattering element above the gap.

11. An optoelectronic semiconductor device comprising:

a multiplicity of radiation-emitting semiconductor chips, arranged in particular in a matrix-like manner, wherein the semiconductor chips are applied on a common carrier and wherein the semiconductor chips each have a radiation exit area facing away from the carrier element;

a multiplicity of converter elements disposed downstream of the semiconductor chip for converting electromagnetic radiation emitted by the semiconductor chip; and

precisely one scattering element situated downstream of each semiconductor chip and serving for diffusely scattering electromagnetic radiation emitted by the semiconductor chips,

wherein the scattering element covers all the semiconductor chips and has a continuous radiation exit area,

wherein the scattering element is in direct contact with the converter elements and neither a gap nor an interspace is formed at the interface between the converter element and the scattering element,

wherein the at scattering element is a light-scattering film or a light-scattering plate, and

wherein the light-scattering film has a thickness of 10 to 50 μm and light-scattering plate has a thickness of 500 μm to 1 mm,

wherein the converter elements and the scattering elements form a composite assembly, which is applied to the corresponding semiconductor chips by adhesive bonding, so that each converter element is assigned uniquely to one semiconductor chip,

wherein each converter element covers solely the radiation exit area of the corresponding semiconductor chip, so that the converter element does not cover side areas of the corresponding semiconductor chip.

12. A method for producing an optoelectronic semiconductor device, comprising the steps of:

providing a carrier element;

forming a multiplicity of converter element with a first screen printing process on the converter element;

forming precisely one scattering element onto the exposed outer areas of the converter elements with a second screen printing process and forming a composite assembly comprising the converter element and the at least one scattering element, wherein the scattering element covers all the converter elements and has a continuous radiation exit area, wherein neither a gap nor an interspace is formed at the interface between the converter elements and the scattering element and;

detaching the carrier element from the composite assembly; and

subsequently applying the composite assembly comprising the converter elements and the scattering element to radiation-emitting semiconductor chips.

13. The method according to claim 12 , wherein an optoelectronic semiconductor device according to claim 1 is produced.