Active matrix substrate and display device
View Patent ↗An active matrix substrate ( 5 ) is provided with: a plurality of source wiring lines (S) and a plurality of gate wiring lines (G) which are arranged in a matrix; and pixels (P) having thin film transistors ( 25 ) disposed in the vicinity of the intersections of the source wiring lines (S) and the gate wiring lines (G), and pixel electrodes ( 26 ) connected to the thin film transistors ( 25 ). In the active matrix substrate ( 5 ), a base material ( 5 a ) is disposed in such a manner that the source wiring lines (S) and the gate wiring lines (G) intersect each other, and on the base material ( 5 a ), auxiliary capacity electrodes ( 28 ), which are provided on the pixel basis, are made of transparent electrodes, and generate an auxiliary capacity, and auxiliary capacity wiring lines ( 29 ), which are connected to the auxiliary capacity electrodes ( 28 ) and are made of an aluminum alloy, are provided.
1. An active matrix substrate, comprising:
a base material provided with a data wiring line and a scanning wiring line;
a common electrode;
a pixel provided with a switching element connected to the data wiring line and the scanning wiring line; and
an auxiliary capacitor implemented with an auxiliary capacity electrode and a pixel electrode, which are made of transparent metal oxide conductive material, wherein the auxiliary capacity electrode is in direct contact with an auxiliary capacity wiring line, which is made of an aluminum alloy.
2. The active matrix substrate according to claim 1 , wherein the auxiliary capacity wiring line includes a connecting portion, which is provided on a connecting portion of the auxiliary capacity electrode, wherein the connecting portions of the auxiliary capacity electrode and the auxiliary capacity wiring line are in direct contact to each other.
3. The active matrix substrate according to claim 2 , wherein the aluminum alloy of the auxiliary capacity wiring line contains, as an additive, at least one element of silicon, cobalt, nickel, germanium, rhodium, palladium, and tin.
4. The active matrix substrate according to claim 3 , wherein a total % by weight of the additive is 0.6% to 5.0% in the auxiliary capacity wiring line.
5. The active matrix substrate according to claim 3 , wherein the scanning wiring line is made of the same aluminum alloy as the auxiliary capacity wiring line.
6. The active matrix substrate according to claim 3 , further comprising a light shielding block, which is made of the same aluminum alloy as the auxiliary capacity wiring line.
7. The active matrix substrate according to claim 3 , wherein a sheet resistance of the aluminum alloy ranges from 0.1 Ω/sq to 0.4 Ω/sq.
8. The active matrix substrate according to claim 2 , wherein the transparent conductive metal oxide material is at least one of Indium-Tin-Oxide (ITO), Indium-Zinc-Oxide (IZO) and indium-Germanium-Oxide (IGO).
9. The active matrix substrate according to claim 1 , wherein, on the base material, the auxiliary capacity electrodes are provided on the auxiliary capacity wiring lines to be connected thereto in connecting portions between the auxiliary capacity electrodes and the auxiliary capacity wiring lines.
10. The active matrix substrate according to claim 9 , wherein a transparent conductive film is used as the auxiliary capacity electrodes, and the auxiliary capacity wiring lines contain, as an additive, at least one element of carbon, silicon, cobalt, nickel, germanium, rhodium, palladium, and tin.
11. The active matrix substrate according to claim 10 , wherein a total % by weight of the additive is 0.3% to 5.0% in the auxiliary capacity wiring lines.
12. A display device comprising a display portion, wherein, in the display portion, the active matrix substrate according to claim 1 is used.