Compositions containing indium alkoxide, method for the production thereof, and use thereof

1. A liquid indium alkoxide-containing composition, comprising:

a) at least one indium alkoxide; and

b) at least three solvents L 1 , L 2 and L 3 ;

wherein

the solvent L 1 is selected from the group consisting of ethyl lactate, anisole, tetrahydrofurfuryl alcohol, butyl acetate, ethylene glycol diacetate and ethyl benzoate, and

the difference between the boiling points of the two solvents L 2 and L 3 under SATP conditions is at least 30° C., and

wherein the proportion of L 2 is 30-95% by weight, based on total mass of the composition, and the proportion of L 3 is 0.5-70% by weight, based on total mass of the composition.

2. The composition according to claim 1 , wherein the solvent L 1 is selected from the group consisting of ethyl lactate, anisole, tetrahydrofurfuryl alcohol and butyl acetate.

3. The composition according to claim 1 , wherein the at least one indium alkoxide is an indium(III) alkoxide having at least one C1- to C15-alkoxy or oxyalkylalkoxy group.

4. The composition according to claim 3 , wherein the indium(III) alkoxide is indium isopropoxide.

5. The composition according to claim 1 , wherein the at least one indium alkoxide is present in the composition in proportions of 1 to 15% by weight, based on total mass of the composition.

6. The composition according to claim 1 , wherein the solvents L 2 and L 3 are organic solvents, which are each independently selected from the group consisting of alcohols, polyalcohols, esters, amines, ketones and aldehydes.

7. The composition according to claim 1 , wherein the boiling point of L 2 under SATP conditions is 30-120° C. and the boiling point of L 3 under SATP conditions is 120-300° C.

8. The composition according to claim 1 , wherein L 2 is selected from the group consisting of isopropanol, methanol, ethanol, acetone, toluene, tetrahydrofuran, ethyl acetate, methyl ethyl ketone, chloroform and ethylene glycol dimethyl ether.

9. The composition according to claim 1 , wherein L 3 is selected from the group consisting of tetrahydrofurfuryl alcohol, butyl acetate, diethylene glycol, anisole, ethylene glycol diacetate, ethyl benzoate and ethyl lactate.

10. The composition according to claim 1 , wherein said at least three solvents L 1 , L 2 and L 3 of said composition comprise the two solvents isopropanol and diethylene glycol.

11. The composition according to claim 1 , wherein said at least three solvents L 1 , L 2 and L 3 of said composition comprise at least the three solvents isopropanol, butyl acetate and ethyl lactate.

12. The composition according to claim 1 , wherein the composition further comprises at least one further metal alkoxide.

13. The composition according to claim 12 , wherein the proportion of the at least one further metal alkoxide is 0.01-7.5% by weight, based on total mass of the composition.

14. A process for preparing the liquid indium alkoxide-containing composition according to claim 1 , comprising mixing the at least one indium alkoxide with a mixture of the at least three solvents L 1 , L 2 and L 3 .

15. A process for preparing the liquid indium alkoxide-containing composition according to claim 1 , comprising mixing a composition comprising the at least one indium alkoxide and at least one solvent of the at least three solvents L 1 , L 2 and L 3 with at least one other solvent.

16. A semiconductive structure produced from the liquid indium alkoxide-containing composition according to claim 1 .

17. An electronic component produced from the liquid indium alkoxide-containing composition according to claim 1 .

18. The composition according to claim 1 , wherein the at least one indium alkoxide is present in the composition in proportions of 2 to 10% by weight, based on total mass of the composition.

19. The electronic component of claim 17 , wherein the electronic component is selected from the group consisting of transistors, diodes, solar cells, thin-film transistors, thin-film diodes and thin-film solar cells.

20. A method of preparing a semiconductive indium oxide-containing structure comprising:

a) coating a substrate with the liquid indium alkoxide-containing composition according to claim 1 to form a coated substrate;

b) drying said coated substrate; and

c) converting a coating of said coated substrate into indium oxide or an indium oxide-containing layer by heating or irradiating.

21. The method according to claim 20 , wherein said indium oxide or indium oxide containing layer has an RMS roughness of ≦20 nm.