IP Library Granted Patent US 8,389,071
Granted Patent B2
US 8,389,071 · App. 13/149,352 · Granted Mar 5, 2013

Apparatus and method for forming carbon protective layer

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Quick Facts
Patent No.
US 8,389,071
App. No.
13/149,352
Granted
Mar 5, 2013
Kind
B2
Abstract

An apparatus and method for forming a carbon protective layer on a substrate using a plasma CVD method allows a more uniform in-plane distribution of the carbon protective layer thickness. The apparatus includes an annular anode that generates a plasma beam and a disk-shaped shield disposed between the anode and the substrate. The anode, the shield, and the substrate are concentrically arranged so that a straight line connecting the centers of the anode and the substrate is perpendicular to the deposition surface of the substrate where the carbon protective layer is to be formed. The center of the shield is also on the straight line.

Claims (14)

1. A method of forming a carbon protective layer on a disk-shaped substrate by a plasma CVD method, the method comprising the steps of:

disposing the disk-shaped substrate so that a deposition surface of the disk-shaped substrate, where the carbon protective layer is to be formed, is parallel to and spaced from an annular-shaped plasma beam generation source; and

disposing a disk-shaped shield spaced from the annular plasma beam generation source between the annular-shaped plasma beam generation source and the disk-shaped substrate,

wherein the disk-shaped shield is concentrically arranged with the annular-shaped plasma beam generation source and the deposition surface of the disk-shaped substrate so that a straight line connecting a center of the annular-shaped plasma beam generation source and a center of the deposition surface of the disk-shaped substrate is perpendicular to the deposition surface of the disk-shaped substrate, and,

wherein the annular-shaped plasma beam generation source is composed of an annular-shaped anode having an outer diameter that is substantially the same as an outer diameter of the disk-shaped substrate, and

wherein a relative position between the annular-shaped plasma beam generation source and the disk-shaped substrate is fixed.

2. The method according to claim 1 , further comprising the step of supplying only discharge gas and raw material gas for forming the carbon protective layer via the plasma CVD method.

3. The method according to claim 1 , wherein the disk-shaped substrate has a center hole for forming a disk-shaped magnetic recording medium.

4. The method according to claim 3 , wherein:

the disk-shaped shield has a radius A, and

the radius A is selected at a point where a film thickness formed on the disk-shaped substrate without the shield is changed by 30% from a maximum film thickness formed on the disk-shaped substrate without the shield, which maximum film thickness is at the periphery of the center hole.

5. The method according to claim 1 , wherein:

the plasma CVD method uses carbon containing gas as a raw material for forming the carbon protective layer, and

the method further comprises supplying the carbon containing gas for forming the carbon protective layer.

Assignments (3)
CHANGE OF NAME Recorded Oct 10, 2011
From: FUJI ELECTRIC DEVICE TECHNOLOGY CO., LTD.
To: FUJI ELECTRIC CO., LTD.
Reel/Frame 027249/0159 →
MERGER Recorded Oct 10, 2011
From: FUJI ELECTRIC DEVICE TECHNOLOGY CO., LTD. (MERGER)
To: FUJI ELECTRIC CO., LTD.
Reel/Frame 027288/0820 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 1, 2011
From: NAGATA, NARUHISA
To: FUJI ELECTRIC DEVICE TECHNOLOGY CO., LTD.
Reel/Frame 026368/0457 →