Multi-layer N-type stack for cadmium telluride based thin film photovoltaic devices and methods of making
View Patent ↗Thin film photovoltaic devices are provided that generally include a transparent conductive oxide layer on the glass, a multi-layer n-type stack on the transparent conductive oxide layer, and an absorber layer (e.g., a cadmium telluride layer) on the multi-layer n-type stack. The multi-layer n-type stack generally includes a first layer (e.g., a cadmium sulfide layer) and a second layer (e.g., a mixed phase layer). The multi-layer n-type stack can, in certain embodiments, include additional layers (e.g., a third layer, a fourth layer, etc.). Methods are also generally provided for manufacturing such thin film photovoltaic devices.
1. A thin film photovoltaic device, comprising:
a glass;
a transparent conductive oxide layer on the glass;
a mixed phase layer on the transparent conductive oxide layer, wherein the mixed phase layer comprises cadmium, sulfur, and oxygen in a mixture of compounds;
a cadmium sulfide layer on the transparent conductive oxide layer; and,
an absorber layer on the cadmium sulfide layer.
2. The device of claim 1 , wherein the absorber layer comprises cadmium telluride.
3. The device of claim 1 , wherein the mixed phase layer comprises at least two of cadmium oxide, cadmium sulfide, cadmium sulfate, and cadmium sulfite.
4. The device of claim 1 , wherein the mixed phase layer comprises at least three of cadmium oxide, cadmium sulfide, cadmium sulfate, and cadmium sulfite.
5. The device of claim 1 , wherein the mixed phase layer comprises cadmium oxide, cadmium sulfide, cadmium sulfate, and cadmium sulfite.
6. The device of claim 1 , wherein the mixed phase layer is positioned between the transparent conductive oxide layer and the cadmium sulfide layer.
7. The device of claim 1 , wherein the cadmium sulfide layer is positioned between the transparent conductive oxide layer and the mixed phase layer.
8. The device of claim 1 , further comprising:
a cadmium oxide layer positioned between the transparent conductive oxide layer and the absorber layer.
9. The device of claim 1 , further comprising:
a cadmium-sulfur-oxide layer positioned between the transparent conductive oxide layer and the absorber layer, wherein the cadmium-sulfur-oxide layer comprises CdSOx, where x is 3 or 4.
10. The device of claim 1 , wherein the cadmium sulfide layer forms a first layer of a multi-layer n-type stack and the mixed phase layer forms a second layer of the multi-layer n-type stack, and wherein the multi-layer n-type stack further comprises a third layer, the third layer comprising cadmium and oxygen.
11. The device of claim 10 , wherein the third layer further comprises sulfur.
12. The device of claim 1 , wherein the cadmium sulfide layer comprises oxygen in an amount of about 0.1% by weight to about 25% by weight.
13. The device of claim 1 , further comprising:
a resistive transparent buffer layer directly on the transparent conductive oxide layer such that the cadmium sulfide layer and the mixed phase layer are on the resistive transparent buffer layer.
14. A method of forming a thin film photovoltaic device, the method comprising:
depositing a mixed phase layer on a transparent conductive oxide layer, wherein the transparent conductive oxide layer is on a glass substrate, and wherein the mixed phase layer comprises cadmium, sulfur, and oxygen;
depositing a cadmium sulfide layer on the transparent conductive oxide layer; and,
depositing an absorber layer on the cadmium sulfide layer.
15. The method of claim 14 , wherein the mixed phase layer comprises at least two of cadmium sulfide, cadmium oxide, cadmium sulfate, and cadmium sulfite.
16. The method of claim 14 , further comprising:
depositing at least one of a cadmium oxide layer or a cadmium-sulfur-oxide layer on the transparent conductive oxide layer.
17. The method of claim 14 , wherein depositing the mixed phase layer comprises:
co-sputtering a first target and a second target, wherein the first target and the second target have differing compositions.
18. The method of claim 14 , wherein depositing the mixed phase layer comprises:
co-sputtering a first target, a second target, and a third target, wherein the first target, the second target, and the third target have differing compositions.
19. The method of claim 14 , wherein depositing the mixed phase layer comprises:
sputtering a mixed target, wherein the mixed target comprises at least two of cadmium sulfide, cadmium oxide, cadmium sulfate, and cadmium sulfite.
20. The method of claim 14 , wherein depositing the cadmium sulfide layer comprises:
sputtering a target in a sputtering atmosphere, wherein the target comprises cadmium sulfide.