IP Library Granted Patent US 8,951,651
Granted Patent B2
US 8,951,651 · App. 13/149,659 · Granted Feb 10, 2015

Perpendicular magnetic recording disk

View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 8,951,651
App. No.
13/149,659
Granted
Feb 10, 2015
Kind
B2
Abstract

[Problem] A perpendicular magnetic disk with an improved SNR and increased recording density by further advancing microfabrication and uniformalization of particle diameters and improving crystal orientation regarding a preliminary ground layer made of a Ni-base alloy is provided. [Solution] The perpendicular magnetic disk includes: on a base 110 , a first Ni alloy layer 142 and a second Ni alloy layer 144 ; a ground layer 150 having Ru as a main component; and a perpendicular magnetic recording layer 160 containing a CoPt-base alloy and an oxide in this order, the first Ni alloy layer 142 and the second Ni alloy layer 144 including at least one element that takes a bcc crystal structure as a simple substance, and the second Ni alloy layer 144 further including an oxide.

Claims (35)

1. A perpendicular magnetic disk comprising:

a substrate;

on the substrate, a soft magnetic layer; a first Ni alloy layer and a second Ni alloy layer; a ground layer having Ru as a main component; and a perpendicular magnetic recording layer containing a CoPt-base alloy and an oxide in this order,

both the first Ni alloy layer and the second Ni alloy layer including at least one element that takes a bcc crystal structure as a simple substance, and

the second Ni alloy layer further including a metal oxide,

wherein the element taking the bcc crystal structure included in the first Ni alloy layer has a content equal to or larger than 3 atomic percent and equal to or smaller than 10 atomic percent,

wherein the second Ni alloy layer has a film thickness equal to or larger than 1 nm and equal to or smaller than 5 nm, and

wherein said first Ni alloy layer has a thickness of 7 nm and is greater in thickness than the second Ni alloy layer, being between 1.4 and 7 times thicker than the second Ni-alloy layer.

2. The perpendicular magnetic disk according to claim 1 , wherein the oxide included in the second Ni alloy layer is in an amount of 1 mole percent or larger and 10 mole percent or smaller.

3. The perpendicular magnetic disk according to claim 1 , wherein

the element taking the bcc crystal structure included in the first Ni alloy layer and the second Ni alloy layer is one or plurality of elements selected from W, Mo, Ta, and Cr.

4. A perpendicular magnetic disk comprising:

a substrate;

on the substrate, a soft magnetic layer; a first Ni alloy layer and a second Ni alloy layer; a ground layer having Ru as a main component; and a perpendicular magnetic recording layer containing a CoPt-base alloy and an oxide in this order,

both the first Ni alloy layer and the second Ni alloy layer including at least one element that takes a bcc crystal structure as a simple substance, and

the second Ni alloy layer further including a metal oxide,

wherein at least one metal element from among Al, Si, Zr, and B is further present in the first Ni alloy layer, and

wherein as between the first Ni alloy layer and the second Ni alloy layer, the first Ni alloy layer has at least one different chemical element with respect to the second Ni alloy layer.

5. A perpendicular magnetic disk comprising:

a substrate;

on the substrate, a soft magnetic layer, a first Ni alloy layer and a second Ni alloy layer; a ground layer having Ru as a main component; and a perpendicular magnetic recording layer containing a CoPt-base alloy and an oxide in this order,

both the first Ni alloy layer and the second Ni alloy layer including at least one element that takes a bcc crystal structure as a simple substance, and

the second Ni alloy layer further including a metal oxide,

wherein the first Ni alloy layer further has a nonmagnetic amorphous alloy layer provided on a substrate side between the soft magnetic layer and the first Ni alloy layer, said amorphous alloy layer comprising Ta to prevent irregularities at an interface between the soft magnetic layer and the first Ni alloy layer.

6. The perpendicular magnetic disk according to claim 4 or 5 , wherein

the second Ni alloy layer has a film thickness equal to or larger than 1 nm and equal to or smaller than 5 nm.

7. A perpendicular magnetic disk comprising:

a substrate,

a first Ni alloy layer and a second Ni alloy layer; a ground layer having Ru as a main component; and a perpendicular magnetic recording layer containing a CoPt-base alloy and an oxide disposed on the substrate in this order,

wherein the first Ni alloy layer and the second Ni alloy layer include at least one element that takes a bcc crystal structure as a simple substance,

wherein the second Ni alloy layer further includes an oxide, and

wherein the element taking the bcc crystal structure included in the first Ni alloy layer has a content equal to or larger than 3 atomic percent and equal to or smaller than 10 atomic percent,

said disk further comprising a soft magnetic layer disposed between said substrate and said first Ni alloy layer, wherein said first Ni alloy layer is in contact with said soft magnetic layer.

8. The perpendicular magnetic disk according to claim 1 , wherein said first Ni alloy layer does not have an oxide.

9. The perpendicular magnetic disk according to claim 1 , wherein said first Ni alloy layer is more than 4 times greater in thickness than the second Ni alloy layer.

Assignments (6)
PATENT COLLATERAL AGREEMENT - DDTL LOAN AGREEMENT Recorded Aug 21, 2023
From: WESTERN DIGITAL TECHNOLOGIES, INC.
To: JPMORGAN CHASE BANK, N.A.
Reel/Frame 067045/0156 →
PATENT COLLATERAL AGREEMENT - A&R LOAN AGREEMENT Recorded Aug 21, 2023
From: WESTERN DIGITAL TECHNOLOGIES, INC.
To: JPMORGAN CHASE BANK, N.A.
Reel/Frame 064715/0001 →
RELEASE OF SECURITY INTEREST AT REEL 053926 FRAME 0446 Recorded Feb 8, 2022
From: JPMORGAN CHASE BANK, N.A.
To: WESTERN DIGITAL TECHNOLOGIES, INC.
Reel/Frame 058966/0321 →
SECURITY INTEREST Recorded Sep 29, 2020
From: WESTERN DIGITAL TECHNOLOGIES, INC.
To: JPMORGAN CHASE BANK, N.A., AS AGENT
Reel/Frame 053926/0446 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 9, 2020
From: WD MEDIA (SINGAPORE) PTE. LTD
To: WESTERN DIGITAL TECHNOLOGIES, INC.
Reel/Frame 053180/0398 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 22, 2011
From: SAKAMOTO, KAZUAKI
To: WD MEDIA (SINGAPORE) PTE.LTD.
Reel/Frame 027267/0900 →