Photovoltaic devices and method of making
View Patent ↗In one aspect of the present invention, a photovoltaic device is provided. The photovoltaic device includes a window layer and an absorber layer disposed on the window layer, wherein the absorber layer includes a first region and a second region, the first region disposed adjacent to the window layer. The absorber layer further includes a first additive and a second additive, wherein a concentration of the first additive in the first region is greater than a concentration of the first additive in the second region, and wherein a concentration of the second additive in the second region is greater than a concentration of the second additive in the first region. Method of making a photovoltaic device is also provided.
1. A photovoltaic device, comprising:
a window layer comprising a first semiconductor material doped to be n-type; and
an absorber layer comprising a second semiconductor material doped to be p-type, the first and second semiconductor materials being different, the absorber layer disposed on the window layer, wherein the absorber layer comprises a first region and a second region, each having the second semiconductor material doped to be p-type, the first region being an interfacial region disposed adjacent to the window layer and the second region being a bulk region, the first region having a first thickness, the second region having a second thickness, wherein the first thickness is less than the second thickness;
wherein the absorber layer comprises a first additive and a second additive,
wherein the first additive comprises oxygen compositionally graded across a thickness of the absorber layer,
wherein a concentration of the first additive in the first region is greater than a concentration of the first additive in the second region, and the first additive provides for an improved interface between the window layer and the absorber layer, and
wherein a concentration of the second additive in the second region is greater than a concentration of the second additive in the first region.
2. The photovoltaic device of claim 1 , wherein the second additive comprises nitrogen, arsenic, phosphorous, antimony, zinc, or combinations thereof.
3. The photovoltaic device of claim 1 , wherein the second additive comprises nitrogen.
4. The photovoltaic device of claim 1 , wherein the second additive comprises zinc.
5. The photovoltaic device of claim 1 , wherein the second additive comprises nitrogen and zinc.
6. The photovoltaic device of claim 1 , wherein the second additive is compositionally graded across a thickness of the absorber layer.
7. The photovoltaic device of claim 1 , wherein the concentration of the first additive in the first region is in a range from about 10 16 cm −3 to about 10 20 cm −3 .
8. The photovoltaic device of claim 1 , wherein the concentration of the first additive in the second region is in a range from about 10 14 cm −3 to about 10 19 cm −3 .
9. The photovoltaic device of claim 1 , wherein the concentration of the second additive in the second region is in a range from about 10 16 cm −3 to about 10 20 cm −3 .
10. The photovoltaic device of claim 1 , wherein the concentration of the second additive in the second region is in a range from 10 18 cm −3 to about 10 22 cm −3 .
11. The photovoltaic device of claim 1 , wherein the concentration of the second additive in the first region is in a range from about 10 14 cm −3 to about 10 19 cm −3 .
12. The photovoltaic device of claim 1 , wherein the first thickness is in a range from about 10 nanometers to about 500 nanometers.
13. The photovoltaic device of claim 1 , wherein the second thickness is in a range from about 1000 nanometers to about 5000 nanometers.
14. The photovoltaic device of claim 1 , wherein the absorber layer comprises cadmium telluride, cadmium zinc telluride, cadmium sulfur telluride, cadmium manganese telluride, cadmium magnesium telluride, or combinations thereof.
15. The photovoltaic device of claim 1 , wherein the window layer comprises cadmium sulfide, cadmium selenide, oxygenated cadmium sulfide, zinc telluride, zinc selenide, zinc sulfide, indium selenide, indium sulfide, zinc oxihydrate, or combinations thereof.
16. The photovoltaic device of claim 1 , wherein the first region has an effective carrier density in a range lower than about 1×10 14 cm −3 .
17. The photovoltaic device of claim 1 , wherein the second region has an effective carrier density in a range greater than about 3×10 14 cm −3 .
18. A photovoltaic device, comprising:
a window layer comprising a first semiconductor material doped to be n-type; and
an absorber layer comprising a second semiconductor material doped to be p-type, the first and second semiconductor materials being different, the absorber layer disposed on the window layer, wherein the absorber layer comprises a first region and a second region, each having the second semiconductor material doped to be p-type, the first region being an interfacial region disposed adjacent to the window layer and the second region being a bulk region, the interfacial region having a thickness less than that of the bulk region;
wherein the absorber layer comprises a first additive and a second additive,
the first additive comprising oxygen and the second additive comprising nitrogen, zinc, arsenic, phosphorous, antimony, or combinations thereof,
wherein a concentration of the first additive continuously decreases across a thickness of the absorber layer from the first region to the second region, and
wherein a concentration of the second additive continuously increases across the thickness of the absorber layer from the first region to the second region.
19. The photovoltaic device of claim 18 , wherein the first region of the absorber layer has a first effective carrier density in a range of about 1×10 13 to about 1×10 14 per cubic centimeter, and the second region of the absorber layer has a second effective carrier density in a range of about 1×10 14 to about 1×10 16 per cubic centimeter.