Thin film transistor display panel and manufacturing method of the same
View Patent ↗A TFT display panel having a high charge mobility and making it possible to obtain uniform electric characteristics with respect to a large-area display is provided as well as a manufacturing method thereof. A TFT display panel includes a gate electrode formed on an insulation substrate, a first gate insulting layer formed of SiNx on the gate electrode, a second gate insulting layer formed of SiOx on the first gate insulting layer, an oxide semiconductor layer formed to overlap the gate electrode and having a channel part, and a passivation layer formed of SiOx on the oxide semiconductor layer and the gate electrode, and the passivation layer includes a contact hole exposing the drain electrode. The contact hole has a shape in which the passivation layer of a portion directly exposed together with a metal occupies an area smaller than the upper passivation layer.
1. A TFT display panel comprising:
a gate line having a gate pad part, connected to a gate electrode and disposed on an insulation substrate;
a first gate insulting layer disposed on the gate line and the gate electrode and comprising silicon nitride(SiNx);
a second gate insulting layer disposed on the first gate insulting layer and comprising silicon oxide(SiOx);
an oxide semiconductor layer overlapping the gate electrode and having a channel part;
a source electrode and a drain electrode disposed on the oxide semiconductor layer to be separated from each other;
a first passivation layer disposed on the source electrode and the drain electrode and comprising silicon oxide(SiOx); and
a second passivation layer disposed on the first passivation layer and comprising silicon nitride(SiNx),
wherein the second passivation layer, the first passivation layer, the second gate insulating layer, and the first gate insulating layer have a contact hole exposing the gate pad part, and
the contact hole has a shape in which the cross-sectional area increases from the bottom surface at the gate pad part upward.
2. The TFT display panel of claim 1 , wherein:
the oxide semiconductor layer comprises an oxide of a material selected from among Zn, In, Ga, Sn Cd, Ge, Pb, Sr, Ca, Ni, Cu, Sb, Ba, Sc, Y, Nb, Ta, Hf, Nd, metal elements of groups 12, 13, and 14 of the periodic table, and combinations thereof.
3. The TFT display panel of claim 1 , wherein:
a sidewall of the first contact hole has a structure in which a gradient at the first passivation layer is smaller than a gradient at the second passivation layer.
4. The TFT display panel of claim 2 , wherein:
the first gate insulating layer has a thickness of about 250 nm to about 500 nm, and the second gate insulating layer has a thickness of about 30 nm to about 100 nm.
5. The TFT display panel of claim 1 , wherein:
the second passivation layer and the first passivation layer have a first contact hole exposing the drain electrode, and
the first contact hole has a shape in which the cross-sectional area increases from the bottom surface at the drain electrode upward.
6. The TFT display panel of claim 5 , wherein:
a sidewall of the first contact hole has a first slope, a second slope less steep than the first slope, and a third slope steeper than the second slope from the bottom surface upward.
7. The TFT display panel of claim 6 , wherein:
the first gate insulating layer has a thickness of about 250 nm to about 500 nm, and the second gate insulating layer has a thickness of about 30 nm to about 100 nm.
8. The TFT display panel of claim 1 , wherein:
the first gate insulating layer has a thickness of about 250 nm to about 500 nm, and the second gate insulating layer may be formed to have a thickness of about 30 nm to about 100 nm.
9. The TFT display panel of claim 1 , wherein:
sidewalls of the passivation layer at the first contact hole form an inverted trapezoidal shape.
10. The TFT display panel of claim 5 , further comprising:
a pixel electrode layer formed from a transparent conductive material disposed on the second passivation layer; wherein
the transparent conductive material in the first contact hole has a vertical structure in an inverted trapezoidal shape.