Device and method for the production of silicon blocks
View Patent ↗A device for the production of silicon blocks comprises a vessel for receiving a silicon melt, the vessel comprising a vessel wall comprising at least one side wall and a bottom as well as an inside and an outside and a central longitudinal axis, and means for creating a temperature field on the inside of the bottom, the temperature field having a temperature gradient at the bottom of the vessel which is perpendicular to the central longitudinal axis at least in some regions when the silicon melt cools down for crystallization.
1. A device for the production of silicon blocks, the device comprising:
a vessel for receiving a silicon melt, the vessel comprising a vessel wall comprising at least one side wall, a bottom, an inside and an outside, said vessel further comprising a central longitudinal axis; and
means for creating a temperature field on the inside of the bottom which temperature field has a temperature gradient which temperature gradient, when the silicon melt cools down, is perpendicular to the central longitudinal axis at least in some regions of the bottom of the vessel, said means for creating the temperature field on the inside of the bottom comprising an insulation unit for insulating the vessel by means of at least a first bottom insulation element and a second bottom insulation element, said first bottom insulation element comprising at least one region having a heat conductivity that differs from a heat conductivity in a region of said second bottom insulation element.
2. A device according to claim 1 , wherein the vessel wall comprises at least two regions of different heat conductivity.
3. A device according to claim 1 , wherein the bottom comprises at least two different materials whose contribution to a thickness of the bottom varies in the direction perpendicular to the central longitudinal axis.
4. A device according to claim 1 , wherein the bottom comprises at least two regions in which the bottom has a different thickness.
5. A device according to claim 1 , further comprising an insulation unit for insulating the vessel by means of one of a bottom insulation element and a side insulation element.
6. A device according to claim 5 , wherein at least two side insulation elements are provided, with the first side insulation element comprising at least one region with a heat conductivity which differs from the heat conductivity in a region of the second side insulation element.
7. A device according to claim 5 , wherein at least one of the insulation elements is displaceable relative to the vessel.
8. A device according to claim 1 , further comprising at least one active temperature control unit comprising at least one temperature control element for creating an inhomogeneous temperature field at the bottom of the vessel.
9. A device according to claim 8 , wherein the at least one temperature control element comprises one of at least one bottom heating element and at least one side heating element.
10. A device according to claim 8 , wherein the at least one temperature control element comprises one of at least one bottom cooling element and at least one side cooling element.
11. A device according to claim 9 , wherein the at least one temperature control element is arranged relative to the vessel in such a way as to be changeable in position.
12. A method for the production of silicon blocks, the method comprising the following steps:
providing a device comprising a vessel for receiving a silicon melt, the vessel comprising a vessel wall having a bottom, said device further comprising a means for creating a temperature field on an inside of the bottom, said means for creating the temperature field on the inside of the bottom comprising an insulation unit comprising at least two bottom insulation elements for insulating the vessel, one of said insulation bottom elements comprising at least one region with a heat conductivity which differs from a heat conductivity in a region of another one of said two bottom insulation elements;
providing a silicon melt in the vessel; and
creating an inhomogeneous temperature field at the bottom of the vessel when the silicon melt crystallizes.
13. A device according to claim 1 , wherein said first bottom insulation element is adjacent to said second bottom insulation element.
14. A device according to claim 1 , wherein at least a portion of said first bottom insulation element and at least a portion of said second bottom insulation element are in direct contact with said bottom.
15. A device according to claim 14 , wherein said first bottom insulation element and said second bottom insulation element extend in a direction parallel to said bottom.
16. A method according to claim 12 , wherein said one of said at least two bottom insulation elements is located adjacent to said another one of said at least two bottom insulation elements.
17. A method according to claim 16 , wherein at least a portion of said one of said at least two bottom insulation elements and at least a portion of said another one of said at least two bottom insulation elements are in direct contact with said bottom.
18. A method according to claim 17 , wherein said one of said at least two bottom insulation elements and said another one of said at least two bottom insulation elements extend in a direction parallel to said bottom, said temperature field having a temperature gradient, said temperature gradient being perpendicular to a central longitudinal axis of the vessel at least in some regions of the bottom of the vessel.