Light-emitting device having a trench in a semiconductor layer
View Patent ↗A light-emitting device comprises a substrate, an epitaxial structure formed on the substrate including a first semiconductor layer, a second semiconductor layer, and a light-emitting layer formed between the first semiconductor layer and the second semiconductor layer. A trench is formed in the epitaxial structure to expose a part of side surface of the epitaxial structure and a part of surface of the first semiconductor layer, so that a first conductive structure is formed on the part of surface of the first semiconductor layer in the trench, and a second conductive structure is formed on the second semiconductor layer. The first conductive structure includes a first electrode and a first pad electrically contacted with each other. The second conductive structure includes a second electrode and a second pad electrically contacted with each other. Furthermore, the area of at least one of the first pad and the second pad is between 1.5×10 4 μm 2 and 6.2×10 4 μm 2 .
1. A light-emitting device comprising:
a substrate;
an adhesive layer on the substrate;
a reflection layer on the adhesive layer;
a second semiconductor layer on the reflection layer;
a light-emitting layer on the second semiconductor layer;
a first semiconductor layer on the light-emitting layer, wherein a thickness of the first semiconductor layer is H;
a plurality of trenches through the first semiconductor layer, wherein a depth of one of the plurality of trenches is h; and
a first conductive structure on the first semiconductor layer;
wherein the depth of the trench h is greater than ⅓ of the thickness of the first semiconductor layer H;
wherein the first conductive structure comprises a first electrode encompassing an edge region of the light-emitting device, and
wherein a total area of all trenches in the first semiconductor layer is not greater than 50% of an area of a top surface of the first semiconductor layer.
2. The light-emitting device according to claim 1 , wherein the at least one trench is formed by removing a portion of the top surface of the first semiconductor layer.
3. The light-emitting device according to claim 1 , wherein the depth of the trench h is not greater than the thickness of the first semiconductor layer H.
4. The light-emitting device according to claim 1 , wherein the first conductive structure comprises a first pad connecting with the first electrode.
5. The light-emitting device according to claim 4 , wherein an area of the first pad is between 1.5×10 4 μm 2 and 6.2×10 4 μm 2 .
6. The light-emitting device according to claim 4 , wherein the first conductive structure further comprises a second pad.
7. The light-emitting device according to claim 1 , wherein the plurality of trenches forms a two-dimensional array.
8. The light-emitting device according to claim 1 , wherein a top view of one of the plurality of trenches comprises a circle.
9. A light-emitting device comprising:
a substrate;
a second semiconductor layer on the substrate;
a light-emitting layer on the second semiconductor layer;
a first semiconductor layer on the light-emitting layer;
a plurality of trenches in the first semiconductor layer; and
a first conductive structure comprising a plurality of first electrodes and a first pad on the first semiconductor layer;
wherein a depth of one of the plurality of trenches is greater than one-third of a thickness of the first semiconductor layer but less than the thickness of the first semiconductor layer;
wherein the plurality of trenches is formed between two of the plurality of first electrodes, and
wherein a total area of all trenches in the first semiconductor layer is not greater than 50% of an area of a top surface of the first semiconductor layer.
10. The light-emitting device according to claim 9 , further comprising another trench in the first semiconductor layer, wherein the another trench is formed between two of the plurality of first electrodes.
11. The light-emitting device according to claim 9 , wherein a top view one of the plurality of trenches comprises a stripe.
12. The light-emitting device according to claim 11 , wherein the stripe comprises a round corner.
13. The light-emitting device according to claim 9 , wherein an area of the first pad is between 1.5×10 4 μm 2 and 6.2×10 4 μm 2 .
14. The light-emitting device according to claim 9 , wherein two of the plurality of first electrodes encompass an edge region of the light-emitting device, and another two of the plurality of first electrodes extend through a central region of the top surface of the first semiconductor layer.
15. The light-emitting device according to claim 9 , wherein the first conductive structure further comprises a second pad on the first semiconductor layer.