Low-noise, high-gain semiconductor device incorporating BCD (bipolar-CMOS-DMOS) technology
View Patent ↗Techniques are described to form a low-noise, high-gain semiconductor device. In one or more implementations, the device includes a substrate including a first dopant material having a concentration ranging from about 1×10 10 /cm 3 to about 1×10 19 /cm 3 . The substrate also includes at least two active regions formed proximate to a surface of the substrate. The at least two active regions include a second dopant material, which is different than the first dopant material. The device further includes a gate structure formed over the surface of the substrate between the active regions. The gate structure includes a doped polycrystalline layer and an oxide layer formed over the surface between the surface and the doped polycrystalline layer. The doped polycrystalline layer includes the first dopant material having a concentration ranging from about 1×10 19 /cm 3 to about 1×10 21 /cm 3 .
1. A semiconductor device comprising:
a substrate having a surface, the substrate including a first dopant material having a concentration from about 1×10 13 /cm 3 to about 1×10 17 /cm 3 ;
at least two active regions formed proximate to the surface of the substrate, the at least two active regions each including a second dopant material; and
a gate structure formed over the surface of the substrate between the at least two active regions, the gate structure including a doped polycrystalline layer and an oxide layer formed over the surface between the surface and the doped polycrystalline layer, the doped polycrystalline layer including the first dopant material having a concentration ranging from about 1×10 19 /cm 3 to about 1×10 21 /cm 3 ,
wherein the doped polycrystalline layer further comprises a first doped polycrystalline region including the second dopant material having a concentration ranging from about 1×10 19 /cm 3 to about 1×10 21 /cm 3 , a second doped polycrystalline region including the first dopant material having a concentration ranging from about 1×10 19 /cm 3 to about 1×10 21 /cm 3 , and a third doped polycrystalline region including the second dopant material having a concentration ranging from about 1×10 19 /cm 3 to about 1×10 21 /cm 3 , the first doped polycrystalline region and the third doped polycrystalline region comprise at least two separate and distinct regions disposed within an interior of the second doped polycrystalline region.
2. The semiconductor device as recited in claim 1 , wherein the second doped polycrystalline region is disposed between the first doped polycrystalline region and the third doped polycrystalline region.
3. The semiconductor device as recited in claim 1 , wherein the substrate comprises a well.
4. The semiconductor device as recited in claim 1 , wherein the first dopant material comprises a p-type material and the substrate comprises an n-type material.
5. The semiconductor device as recited in claim 1 , wherein the semiconductor device functions as a buried channel semiconductor device when a voltage of a proper polarity and value is applied to the gate structure such that a conducting channel for majority carriers is formed away from an interface of the oxide layer and the surface.
6. An semiconductor device comprising:
a substrate having a surface;
an n-well formed proximate to the surface of the substrate, the n-well including an n-type dopant material having a concentration of about 1×10 15 /cm 3 ;
at least two active regions formed within the n-well proximate to the surface of the substrate, the at least two active regions comprising a p-type dopant material; and
a gate structure formed over the surface of the substrate between the at least two active regions, the gate structure including a doped polycrystalline layer and an oxide layer formed between the surface and the doped polycrystalline layer, the doped polycrystalline layer including the n-type dopant material having a concentration ranging from about 1×10 19 /cm 3 to about 1×10 21 /cm 3 ,
wherein the doped polycrystalline layer further comprises a first doped polycrystalline region including the p-type dopant material having a concentration ranging from about 1×10 19 /cm 3 to about 1×10 21 /cm 3 , a second doped polycrystalline region including the n-type dopant material having a concentration ranging from about 1×10 19 /cm 3 to about 1×10 21 /cm 3 , and a third doped polycrystalline region including the p-type dopant material having a concentration ranging from about 1×10 19 /cm 3 to about 1×10 21 /cm 3 , the first doped polycrystalline region and the third doped polycrystalline region comprise at least two separate and distinct regions disposed within an interior of the second doped polycrystalline region.
7. The semiconductor device as recited in claim 6 , wherein the semiconductor device functions as a buried channel semiconductor device when a voltage of a proper polarity and value is applied to the gate structure such that a conducting channel for majority carriers is formed away from an interface of the oxide layer and the surface.