Semiconductor wafer with reduced thickness variation and method for fabricating same
View Patent ↗According to one embodiment, a semiconductor wafer comprises a plurality of solder bumps for providing device contacts formed over a functional region of the semiconductor wafer, and one or more support rings surrounding the functional region. The one or more support rings and the plurality of solder bumps are formed so as to have substantially matching heights. The presence of the one or more support rings causes the semiconductor wafer to have a substantially uniform thickness in the functional region after a thinning process is performed on the semiconductor wafer. A method for fabricating the semiconductor wafer comprises forming the plurality of solder bumps over the functional region, and forming the one or more support rings surrounding the functional region before performing the thinning process on the semiconductor wafer.
1. A semiconductor wafer comprising:
a plurality of solder bumps for providing device contacts over a functional region of said semiconductor wafer;
at least two support rings surrounding said functional region;
said at least two support rings and said plurality of solder bumps being situated on one surface of said semiconductor wafer;
said at least two support rings formed in a device free perimeter zone of said semiconductor wafer and said plurality of solder bumps situated on said functional region of said semiconductor wafer substantially matching in height;
said at least two support rings causing said semiconductor wafer to have a substantially uniform thickness in said functional region after a thinning process is performed on said semiconductor wafer.
2. The semiconductor wafer of claim 1 , wherein said at least two support rings are substantially continuous.
3. The semiconductor wafer of claim 1 , wherein said at least two support rings comprise at least one gap.
4. The semiconductor wafer of claim 1 , wherein said at least two support rings comprise support ring segments surrounding said functional region, said support ring segments being spaced apart by gaps.
5. The semiconductor wafer of claim 1 , wherein said at least two support rings comprise several substantially concentric support rings.
6. The semiconductor wafer of claim 5 , wherein said several substantially concentric support rings each comprise support ring segments spaced apart by gaps.
7. The semiconductor wafer of claim 1 , wherein said at least two support rings comprise two substantially concentric support rings.
8. The semiconductor wafer of claim 1 , wherein said at least two support rings extend a first distance above said one surface of said semiconductor wafer and said plurality of solder bumps extend a second distance above said one surface, and wherein said first distance is within plus-or-minus approximately twenty percent (20%) of said second distance.
9. The semiconductor wafer of claim 1 , wherein said at least two support rings occupy less than or equal to approximately fifty percent (50%) of said device free perimeter zone.
10. The semiconductor wafer of claim 1 , wherein said at least two support rings comprise a solder ring.
11. A method for fabricating a semiconductor wafer, said method comprising:
forming a plurality of solder bumps on one surface of said semiconductor wafer, said plurality of solder bumps for providing device contacts over a functional region of said semiconductor wafer;
forming at least two support rings on said one surface of said semiconductor wafer and surrounding said functional region, said at least two support rings formed in a device free perimeter zone of said semiconductor wafer and said plurality of solder bumps situated on said functional region of said semiconductor wafer substantially matching in height;
wherein said at least two support rings cause said semiconductor wafer to have a substantially uniform thickness in said functional region after a thinning process is performed on said semiconductor wafer.
12. The method of claim 11 , further comprising thinning said semiconductor substrate after forming said at least two support rings surrounding said functional region.
13. The method of claim 11 , wherein forming said at least two support rings comprises forming two substantially continuous support rings.
14. The method of claim 11 , wherein forming said at least two support rings comprises forming two support rings with each including at least one gap.
15. The method of claim 11 , wherein forming said at least two support rings comprises forming support ring segments surrounding said functional region, said support ring segments spaced apart by gaps.
16. The method of claim 11 , wherein forming said at least two support rings comprises forming several substantially concentric support rings.
17. The method of claim 16 , wherein said several substantially concentric support rings comprise support ring segments spaced apart by gaps.
18. The method of claim 11 , wherein forming said at least two support rings comprises forming two substantially concentric support rings.
19. The method of claim 11 , wherein said at least two support rings extend a first distance above said one surface of said semiconductor wafer and said plurality of solder bumps extend a second distance above said one surface, and wherein said first distance is within plus-or-minus approximately twenty percent (20%) of said second distance.
20. The method of claim 11 , wherein said at least two support rings occupy less than or equal to approximately fifty percent (50%) of said device free perimeter zone.