Low-profile MEMS thermal printhead die having backside electrical connections
View Patent ↗A thermal printhead die is formed from an SOI structure as a MEMS device. The die has a printing surface, a buried oxide layer, and a mounting surface opposite the printing surface. A plurality of ink delivery sites are formed on the printing surface, each site having an ink-receiving and ink-dispensing structure. An ohmic heater is formed adjacent to each structure, and an under-bump metallization (UBM) pad is formed on the mounting surface and is electrically connected to the ohmic heater, so that ink received by the ink-delivery site and electrically heated by the ohmic heater may be delivered to a substrate by sublimation. A through-silicon-via (TSV) plug may be formed through the thickness of the die and electrically coupled through the buried oxide layer from the ohmic heater to the UBM pad. Layers of interconnect metal may connect the ohmic heater to the UBM pad and to the TSV plug.
1. A thermal printhead die, comprising:
an SOI structure having a printing surface, a buried oxide layer, and a mounting surface opposite the printing surface;
a plurality of ink delivery sites, each site having an ink-receiving and ink-dispensing structure formed on the printing surface, and
an ohmic heater formed adjacent to the ink-receiving and ink-dispensing structure; and
at least one under-bump metallization (“UBM”) pad formed on the mounting surface and electrically connected to the ohmic heater; and
at least one through-silicon via (“TSV”) plug electrically coupling the ohmic heater to the at least one UBM pad through the buried oxide layer.
2. The printhead die of claim 1 , further comprising interconnect metal coupling the ohmic heater to the UBM pad.
3. The printhead die of claim 1 , further comprising interconnect metal coupling the ohmic heater to the TSV plug.
4. The printhead die of claim 3 , wherein each ink delivery site further comprises at least one electrical conduction cavity formed through the printing surface, and wherein the interconnect metal connects the ohmic heater to the TSV plug along a bottom of the conduction cavity.
5. The printhead die of claim 1 , wherein the TSV plug comprises a doped and electrically-isolated portion of the SOI structure.
6. The printhead die of claim 1 , wherein the UBM pad comprises a layer of evaporated metal.
7. The printhead die of claim 6 , wherein the evaporated metal comprises titanium-nickel-gold.
8. The printhead die of claim 1 , further comprising a dielectric layer disposed along the mounting surface and forming a soldering cavity exposing at least a portion of the UBM pad for connection to an external electrical source.
9. The printhead die of claim 1 , wherein the ink-receiving structure comprises a single cavity.
10. The printhead die of claim 1 , wherein the ink-receiving and ink-dispensing structure comprises: an ink-receiving cavity; a plurality of ink-dispensing pores formed in the SOI structure and oriented substantially normal to the printing surface to provide a flow path for the ink between the ink-receiving cavity and the print surface.