Double gate thin-film transistor and OLED display apparatus including the same
View Patent ↗A double gate thin-film transistor (TFT), and an organic light-emitting diode (OLED) display apparatus including the double gate TFT, includes a double gate thin-film transistor (TFT) including: a first gate electrode on a substrate; an active layer on the first gate electrode; source and drain electrodes on the active layer; a planarization layer on the substrate and the source and drain electrodes, and having an opening corresponding to the active layer; and a second gate electrode in the opening.
1. A double gate thin-film transistor (TFT) comprising:
a first gate electrode on a substrate;
an active layer on the first gate electrode, with a gate-insulating layer between the first gate electrode and the active layer;
source and drain electrodes on the active layer, with an interlayer insulating layer between the active layer and at least a portion of the source and drain electrodes;
a planarization layer on the substrate and the source and drain electrodes, and having an opening corresponding to the active layer; and
a second gate electrode in the opening.
2. The double gate TFT of claim 1 , wherein the active layer comprises an oxide semiconductor.
3. The double gate TFT of claim 1 , wherein a positive voltage is configured to be applied to the first gate electrode, and a negative voltage is configured to be applied to the second gate electrode.
4. The double gate TFT of claim 1 , wherein the second gate electrode is a cathode electrode of an organic light-emitting diode (OLED) display apparatus.
5. An organic light-emitting diode (OLED) display apparatus comprising:
a pixel electrode electrically connected to a thin-film transistor (TFT) and located on a planarization layer;
a pixel-defining layer (PDL) on the pixel electrode and having a first opening exposing a portion of the planarization layer corresponding to an active layer of the TFT and formed by etching the PDL and the planarization layer, and a second opening exposing a portion of the pixel electrode and formed by etching the PDL; and
an opposite electrode located in the first opening and the second opening.
6. The OLED display apparatus of claim 5 , wherein the TFT comprises:
a first gate electrode on a substrate;
an active layer on the first gate electrode; and
source and drain electrodes on the active layer.
7. The OLED display apparatus of claim 6 , further comprising:
a gate-insulating layer between the first gate electrode and the active layer; and
an interlayer insulating layer between the active layer and at least a portion of the source and drain electrodes.
8. The OLED display apparatus of claim 6 , wherein a positive voltage is configured to be applied to the first gate electrode, and a negative voltage is configured to be applied to the opposite electrode.
9. The OLED display apparatus of claim 5 , wherein one of the source and drain electrodes is connected to the pixel electrode.
10. The OLED display apparatus of claim 5 , wherein the opposite electrode is a second gate electrode of the TFT.
11. The OLED display apparatus of claim 5 , wherein the active layer comprises an oxide semiconductor.